The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

Nussupov, K. Kh.; Бейсенханов, Н. Б.

doi:10.5772/22256

Cited by 2 publications

(1 citation statement)

References 59 publications

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“…In general, it is seen that the films № 1 and № 2 have a similar structure with a distinct fragmentation of the grains on the surface and different from films № 3 and № 4 having insufficient grain fragmentation. This may be due to excessive content of carbon atoms [9,10] in the films № 3 and 4 due to the higher synthesis temperature and a high pressure of CO gas. …”

Section: Resultsmentioning

confidence: 99%

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

Bakranova

Кукушкин

Nussupov

et al. 2016

MATEC Web of Conferences

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Abstract. The nanolayers of single crystal SiC were grown on the surface of a high-resistance n-type silicon substrates by replacement of the atoms in the crystal lattice of silicon on the carbon atoms at the temperatures of 1250, 1330 °C and CO gas pressures 264, 395 Pa, respectively. The formation of crystalline β-SiC phase in films by electron diffraction and Raman spectroscopy techniques was shown. The SiC films are epitaxial and do not contain twins on the surface. By Atomic Force Microscopy is shown that two set of SiC films have pyramidal and step-like structure of the surface with clear-cut fragmentation of grains with sizes between 100 and 200 nm, and this is due to the composition of carbon and silicon atoms in the layer. Two set of SiC films have a granular surface structure with indistinct grain fragmentation. The influence of synthesis condition on the microstructure of film surface is discussed.

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Section: Resultsmentioning

confidence: 99%

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

Bakranova

Кукушкин

Nussupov

et al. 2016

MATEC Web of Conferences

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FORMATION OF CRYSTALLINE SiC IN NEAR-SURFACE SILICON LAYERS BY METHOD OF COORDINATED SUBSTITUTION OF ATOMS

Nussupov,

Beisenkhanov,

Kukushkin

et al. 2023

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In this work, monocrystalline films of silicon carbide were synthesized on the surface of a Si(100) silicon wafer using the method of coordinated substitution of atoms. The films were synthesized at temperatures of 1200 °C and 1300 °C for 20 minutes in a CO gas flow at a pressure of 0.8 Pa. The effect of 1200–1300 °C temperatures on the formation of single- and polycrystalline layers, as well as nanostructured SiC phases in the near-surface region of silicon by the method of atom substitution, is analyzed. The formation of a high-quality crystalline silicon carbide film and the influence of synthesis conditions on the total volume of SiC structural phases, microstructure and nanostructure of the surface are shown. It was found that an increase in temperature from 1200 °C to 1300 °C led to a more intensive formation of silicon carbide and an increase in the number of Si–C bonds by 1.9 times due to an increase in the thickness of the synthesized silicon carbide layer. There is an increase in the proportion of the crystalline phase due to a more intense transformation of the nuclei of nanocrystals into micro- and nanocrystals. Intense processes of penetration of carbon atoms deep into silicon at a temperature of 1300 °C with amorphization of its structure and the formation of Si-C, which can transform into crystalline phases at temperatures above 1300 °C, are assumed. The proportion of the SiC crystalline phase increases to 50.2% of the film volume due to the intensive transformation of nanocrystal nuclei into micro- and nanocrystals. It has been experimentally shown that the formation of various SiC structures on Si (100) occurs in full accordance with the main principles of the method of coordinated substitution of atoms.

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The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

Cited by 2 publications

References 59 publications

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

FORMATION OF CRYSTALLINE SiC IN NEAR-SURFACE SILICON LAYERS BY METHOD OF COORDINATED SUBSTITUTION OF ATOMS

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