Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications

Fu, Fan; Feurer, Thomas; Jäger, Timo; Avancini, Enrico; Bissig, Benjamin; Yoon, Songhak; Buecheler, Stephan; Tiwari, Ayodhya N.

doi:10.1038/ncomms9932

Cited by 430 publications

(391 citation statements)

References 53 publications

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“…Multi-junction hybrid solar cells based on silicon or copper indium gallium selenide (CIGS) and perovskites are a very promising route to deliver a higher efficiency, cost-effective solar technology than that will compete favourably with today's technologies, and we believe this application is likely to be the first commercial appearance of the perovskite solar cells 33,34 .…”

Section: Photovoltaics (Pvs)mentioning

confidence: 99%

Metal halide perovskites for energy applications

2016

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Exploring prospective materials for energy production and storage is one of the biggest challenges in this century. Solar energy is arguably the most important amongst various renewable energy resources, due to its wide availability and sustainability with lowest environmental impact. Metal halide perovskites have emerged as a class of semiconductor materials with unique properties including tuneable band gap, high absorption coefficient, broad absorption spectrum, high charge carrier mobility and long charge diffusion lengths, which enable a broad range of photovoltaic and optoelectronic applications. Since the first embodiment of perovskite solar cells showing a power conversion efficiency of 3.8%, the device performance has now been boosted up to a certified 21% within a few years. In this perspective, we summarize differing forms of perovskite materials produced via various deposition procedures, focusing on their energy related applications, and discuss current challenges and possible solutions, with the aim of stimulating potential new applications.

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Section: Photovoltaics (Pvs)mentioning

confidence: 99%

Metal halide perovskites for energy applications

2016

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“…[23] For example, the optical band gap (E g ) of sputtered ITO, IZO and IO:H films are between 3.5 and 3.8 eV. [111] Transparent electrodes with low absorptance in the NIR-IR part of the spectrum (transparent electrodes with low FCA) are required for CIGS, SHJ and multi-junction devices, such as perovskite-onsilicon [109,112] and perovskite-on-CIGS [113] tandem solar cells, as these devices employ optical absorbers that are active in this range of the spectrum. These tandem approaches are new highefficiency photovoltaic technologies, with a potential to reach about 30% efficiency, [114,115] clearly underscoring the critical importance and urgency of designing transparent electrodes with exceptionally large broadband transparency.…”

Section: Progress Reportmentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

352

288

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With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

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“…For example, these high-mobility TCOs have played a key role in achieving the record conversion efficiencies for silicon heterojunction (SHJ) solar cells 8,9 , and are also being explored for CIGS [10][11][12] and perovskite tandem cells. 13,14,15 Among these high-mobility TCOs, In2O3:H is capable of achieving the highest mobility with values even up to 138 cm 2 /Vs. 7 This material was originally developed by Koida et al, using reactive magnetron sputtering at room temperature from an In2O3 target with the addition of H2O vapour, which resulted in mostly amorphous In2O3:H films.…”

Section: Introductionmentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTHydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 o C, followed by a solid phase crystallization step at 150-200 o C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The

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Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications

Cited by 430 publications

References 53 publications

Metal halide perovskites for energy applications

Metal halide perovskites for energy applications

Transparent Electrodes for Efficient Optoelectronics

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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