Low temperature polycrystalline silicon with single orientation on glass by blue laser annealing

Jin, Seonghyun; Hong, Seoung‐Jin; Mativenga, Mallory; Kim, Boram; Shin, Heung Hyun; Park, Jong Kab; Kim, Tae‐Woong; Jang, Jin

doi:10.1016/j.tsf.2016.10.026

Cited by 31 publications

(32 citation statements)

References 25 publications

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“…Aw avelength range between 740-760 nm yields the highest quality of crystallization. [111] Raman spectroscopy lasers have induced the crystallization of amorphous Si nanomaterials.T he laser heats the sample,typically crystallizing below the melting temperature and thus this crystallization method does not deform the nanostructure. [108] Theb eam intensity,t he exposure time and the temperature gradient all additionally play ar ole,a sw ew ill show in the following paragraphs.M oreover,s amples can be crystallized and recrystallized using lasers,c hanging the degree of crystallinity,the crystal orientation and the grain size through multiple laser shots.…”

Section: Laser-induced Crystallizationmentioning

confidence: 99%

“…[108] Theb eam intensity,t he exposure time and the temperature gradient all additionally play ar ole,a sw ew ill show in the following paragraphs.M oreover,s amples can be crystallized and recrystallized using lasers,c hanging the degree of crystallinity,the crystal orientation and the grain size through multiple laser shots. [111] Raman spectroscopy lasers have induced the crystallization of amorphous Si nanomaterials.T he laser heats the sample,typically crystallizing below the melting temperature and thus this crystallization method does not deform the nanostructure. [112] Laser-induced crystallization occurs via random nucleation and growth, which are dependent on both the temperature and the duration of the laser treatment ( Figure 13).…”

Section: Laser-induced Crystallizationmentioning

confidence: 99%

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Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

et al. 2018

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Metamaterials have optical properties that are unprecedented in nature. They have opened new horizons in light manipulation, with the ability to bend, focus, completely reflect, transmit, or absorb an incident wave front. Optically active metamaterials in particular could be used for applications ranging from 3D information storage to photovoltaic cells. Silicon (Si) particles are some of the most promising building blocks for optically active metamaterials, with high scattering efficiency coupled to low light absorption for visible frequencies. However, to date ideal Si building blocks cannot be produced by bulk synthesis techniques. The key is to find a synthetic route to produce Si building blocks between 75-200 nm in diameter of uniform size and shape, that are crystalline, have few impurities, and little to no porosity. This Review provides a theoretical background on Si optical properties for metamaterials, an overview of current synthetic methods and gives direction towards the most promising routes to ideal Si particles for metamaterials.

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Section: Laser-induced Crystallizationmentioning

confidence: 99%

Section: Laser-induced Crystallizationmentioning

confidence: 99%

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

et al. 2018

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“…Zudem spielen die Strahlungsintensität, die Bestrahlungsdauer und der Temperaturgradient eine Rolle, wie wir in den nächsten Absätzen zeigen werden. Proben können zudem durch Einsatz von Lasern kristallisiert oder rekristallisiert werden, wobei sich der Kristallinitätsgrad, die Kristallorientierung und die Korngröße durch mehrfache Laserschüsse verändert …”

Section: Kristallisationsverfahrenunclassified

Herausforderungen bei der Synthese siliciumbasierter dielektrischer Metamaterialien

et al. 2018

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Metamaterialien haben optische Eigenschaften, die in der Natur beispiellos sind. Mit ihrer Fähigkeit, eine einfallende Wellenfront zu beugen, zu fokussieren, vollständig zu reflektieren, durchzulassen oder zu absorbieren, haben sie bei der Lichtmanipulation neue Horizonte eröffnet. Optisch aktive Metamaterialien sind einsetzbar für Anwendungen, die von der 3D‐Informationsspeicherung bis zu photovoltaischen Zellen reichen. Siliciumpartikel gehören zu den vielversprechendsten Synthesebausteinen für optisch aktive Metamaterialien, bislang können sie aber nicht im großen Maßstab hergestellt werden. Besonders wünschenswert sind einheitliche kristalline Si‐Synthesebausteine mit 75–200 nm Durchmesser und wenigen Verunreinigungen und Poren. Hier werden die theoretischen Hintergründe der optischen Eigenschaften von Si für Metamaterialien besprochen, außerdem werden aktuelle Synthesemethoden und die aussichtsreichsten Wege zu Si‐Partikeln für Metamaterialienwerden vorgestellt.

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“…The crystallization of amorphous silicon (a‐Si) on glass substrate can be possible by using solid phase crystallization (SPC), metal‐induced crystallization (MIC), ELA, and continuous wave (CW) laser annealing. Because of no intradefects in the grains, the ELA poly‐Si is widely used for the manufacturing of AMOLED and active‐matrix liquid crystal display (AMLCD) .…”

Section: Introductionmentioning

confidence: 99%

Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays

Jeong

Lee

et al. 2020

Adv Eng Mater

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Highly robust poly-Si thin-film transistor (TFT) on polyimide (PI) substrate using blue laser annealing (BLA) of amorphous silicon (a-Si) for lateral crystallization is demonstrated. Its foldability is compared with the conventional excimer laser annealing (ELA) poly-Si TFT on PI used for foldable displays exhibiting field-effect mobility of 85 cm 2 (V s) À1 . The BLA poly-Si TFT on PI exhibits the field-effect mobility, threshold voltage (V TH ), and subthreshold swing of 153 cm 2 (V s) À1 , À2.7 V, and 0.2 V dec À1 , respectively. Most important finding is the excellent foldability of BLA TFT compared with the ELA poly-Si TFTs on PI substrates. The V TH shift of BLA poly-Si TFT is %0.1 V, which is much smaller than that (%2 V) of ELA TFT on PI upon 30 000 cycle folding. The defects are generated at the grain boundary region of ELA poly-Si during folding. However, BLA poly-Si has no protrusion in the poly-Si channel and thus no defect generation during folding. This leads to excellent foldability of BLA poly-Si on PI substrate.

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Low temperature polycrystalline silicon with single orientation on glass by blue laser annealing

Cited by 31 publications

References 25 publications

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

Silicon‐Based Dielectric Metamaterials: Focus on the Current Synthetic Challenges

Herausforderungen bei der Synthese siliciumbasierter dielektrischer Metamaterialien

Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays

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