Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator

Abstract

We investigate the kinetics and thermal stability of a simple Cu50.3Zr49.7 binary bulk metallic glass (BMG). The long-term thermal stability of Cu50.3Zr49.7 BMG is evaluated by a newly developed method from an extension of Vogel-Fulcher-Tammann analysis. The method has been proven to be valid in Cu50.3Zr49.7 or even other BMGs.

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

“…Growth along the minor axis of the ellipsoid, i.e., in the <111> direction, proceeds with simultaneous formation of many micro-twins (Drosed & Washburn, 1980). Although solid-phase crystallized poly-Si films have a considerable density of defects, hydrogenation of TFTs effectively inactivates those defects, producing a  FEn of 24 cm 2 /Vs (Little et al, 2001). ( We investigated the microscopic geometry of the grains and defects by SEM and TEM.…”

Thermal Stress Effects on the Electrical Properties of p-Channel Polycrystalline-Silicon Thin-Film Transistors Fabricated via Metal-Induced Lateral Crystallization

“…Unfortunately, poly-Si TFTs require a higher processing temperature than a-Si:H TFTs. Poly-Si TFTs are generally made by depositing a-Si:H thinfilm onto a glass sheet using chemical vapor deposition (CVD) and subsequently exposing the deposited glass to high temperatures for a sufficient period of time to crystallized the a-Si:H into poly-Si, which has been named "solid-phase crystallized (SPC) poly-Si" [13], [14]. This crystallization step is typically performed at 600 • C for several tens of hours, or alternatively, rapid thermal annealing [15] or laser excimer annealing [16] can be employed, wherein a laser or, some other source of a sharp temperature gradient, can be used to minimize the heating of the glass substrate [17].…”

Extraction of trap densities in entire bandgap of poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on process conditions of post annealing

“…[1][2][3][4][5][6]. The outstanding advantage is that the reliability under severe bias and temperature stress is higher than those of amorphous-Si TFTs [7] and low-temperature poly-Si (LTPS) TFTs [8].…”