Low-temperature photoluminescence analysis of the γ-irradiation effect on the defect structure in Ge-doped CdTe single crystals

Nasieka, Iu.; Rashkovetskyi, L.; Boyko, M.; Strelchuk, V. V.; Tsybrii, Z.; Danilchenko, B. A.; Shcherbak, L.

doi:10.1016/j.jlumin.2013.06.046

Cited by 6 publications

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They have also observed that optical dispersive parameters (lattice dielectric constant, infinite frequency dielectric constant, free carrier concentration, plasma frequency, and third-order non-linear optical susceptibility) decrease with increasing γ-irradiation dose. Nasieka et al [54] have explained the Low-temperature photoluminescence study of the effect of γ-irradiation on the defect structure in Ge-doped CdTe single crystals grown with vertical Bridgman technique. They have observed that even at low doses (~ 10 kGy) of γ-irradiation substantial changes in the photoluminescence properties have been observed that has been explained on the basis of radiation induced changes in the concentration of luminescence centers because of their interaction with fast electrons created in accordance with the Compton's phenomenon crystals even at low doses of irradiation and therefore defects structure is observed accordingly.…”

Section: γ-Irradiation Induced Effectmentioning

confidence: 99%

Radiation Induced Effects on Properties of Semiconducting Nanomaterials

Tripathi

Kaur

Ridhi

et al. 2015

SSP

View full text Add to dashboard Cite

The irradiation of nanomaterials with energetic particles has significant effects on the properties of target materials. In addition to the well-known detrimental effects of irradiations, they have also some beneficial effects on the properties of nanomaterials. Irradiation effect can change the morphology of the materials in a controlled manner and tailor their mechanical, structural, optical and electrical properties. Irradiation induced modifications in the properties of nanomaterials can be exploited for many useful applications. With the aim of getting better performance of electronic devices, it is necessary to discuss the irradiation induced changes in the nanomaterials. In order to improve the irradiation hardness of electronic components, it is also crucial to have a fundamental understanding of the impact of the irradiation on the defect states and transport properties of the host material. In the present article, we review some recent advances on the irradiation induced effects on the properties of semiconducting nanomaterials. We have reviewed the effect of different types of irradiations which includes γ-irradiation, electron beam irradiation, laser irradiation, swift heavy ion irradiations, thermal induced, and optical induced irradiations, etc. on the various properties of semiconducting nanomaterials. In addition, the irradiation induced defects are also discussed.

show abstract

Section: γ-Irradiation Induced Effectmentioning

confidence: 99%

Radiation Induced Effects on Properties of Semiconducting Nanomaterials

Tripathi

Kaur

Ridhi

et al. 2015

SSP

View full text Add to dashboard Cite

show abstract

“…Photoluminescence (PL), a powerful and nondestructive microscopic probing technique, is sensitive not only to the intrinsic bandgap but also to the energy levels of the defects around band edge, appropriate for observing the microstructural modification and revealing the irradiation damage mechanism. [17,18] Furthermore, the spatially resolved PL measurement enables a rapid examination of the in-plane homogeneity for focal plane array (FPA) PDs, providing a more comprehensive analysis for irradiation damage. [19,20] In this work, spatially resolved and temperature-dependent PL spectra are performed to investigate the influence on microstructure and spatial uniformity of an In 0.53 Ga 0.47 As/InP p-i-n FPA-PD induced by 20-krad(Si) γ irradiation.…”

Section: Introductionmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

View full text Add to dashboard Cite

InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature‐dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre‐irradiation and post‐irradiation, the spatially resolved PL results of irradiation indicate that the in‐plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature‐dependence PL demonstrate that the PL integral intensity related to impurities and interface‐bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low‐dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.

show abstract