Low temperature oxidation behavior of reactively sputtered TiN by x‐ray photoelectron spectroscopy and contact resistance measurements

Ernsberger, C.; Nickerson, J. T. R.; Smith, Tony; Miller, A. E.; Banks, Daniel S.

doi:10.1116/1.573679

Cited by 144 publications

(42 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…After prolonged ion miffing (21 mm) only the TiO/TiN shoulder remains, with a maximum at a binding energy of 455.1 eV. According to literature [9,5,10] the prominent peak at a BE of 455.1 eV is due to TiNX. Signals originating from the suboxides of Ti are located at binding energies between 455.2 and 458 eV.…”

Section: Depth Profilesmentioning

confidence: 93%

See 1 more Smart Citation

<title>Chemical composition of TiNxOy solar selective absorbers</title>

Eitle

Oelhafen

Lazarov

et al. 1992

Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Selective Materials, Concentrators and Refle

View full text Add to dashboard Cite

TiNXOY films were prepared by activated reactive evaporation (ARE) [1J on copper to produce a tandem solar absorber exhibiting a low emissivity c(250 °C) 0.05. The optical selectivity of the absorber is determined by the preparation conditions. Coatings deposited with different nitrogen to oxygen (pN2 /po2) gas pressure ratios, show that maximum c is obtained when the ratio PN2 /po2 is held 8. The chemical composition of these TiNXOY films was determined by x-ray photoelectron spectroscopy (XPS) and related to solar selective properties. The investigated samples consist of about 38 -42 atomic % titanium, 35 -37 at% oxygen and 21 -23 at% nitrogen (bulk values), depending on preparation conditions. A depth profile indicates an oxygen enrichment at the surface, partially due to the exposure of the samples to atmosphere.After sputtering the photoelectron spectra show a marked peak at the TiO and TiN positions and a weaker one at the Ti02 position. Therefore, with regard to the known composition, the film is mainly a TiO(-N) compound with a small admixture of Ti02 . The surface layer is almost entirely consisting of Ti02. Additionally there might also be a small amount of TiC. (3 at% carbon impurity was detected)

show abstract

Section: Depth Profilesmentioning

confidence: 93%

“…Therefore a thin Ti02 layer rapidely forms after exposure to air. The oxidation progresses preferentially along the voids found in the columnar structure of the films [9].…”

Section: Depth Profilesmentioning

confidence: 99%

<title>Chemical composition of TiNxOy solar selective absorbers</title>

Eitle

Oelhafen

Lazarov

et al. 1992

Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Selective Materials, Concentrators and Refle

View full text Add to dashboard Cite

show abstract

“…With increasing deposition temperature, the crystallinity of TiN is more pronounced, therefore the diffusion of oxygen at grain boundaries is intensified and the absorption of oxygen in polycrystalline films is enhanced. [12][13][14] The summarized resistivity as a function of oxygen content in the films is presented in Figure 5b. Combining XRD, XRR, and XPS analyses, we can explain the fact that TiN layers deposited with different precursor concentrations have the minimum resistivity values at different temperatures.…”

Section: Resultsmentioning

confidence: 99%

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

Lukosius

Wenger

Pasko

et al. 2008

Chemical Vapor Deposition

View full text Add to dashboard Cite

Pure and diluted Ti[N(Et) 2 ] 4 precursors are used to grow TiN layers at 400-600 -C by using atomic vapor deposition (AVD 1 ). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The determined work function of 4.7 eV indicates the possibility of using AVD 1 -grown TiN as a metal gate electrode for PMOSFET and metal-insulator-metal (MIM) devices. TiN/HfO 2 /SiO 2 stacks are integrated into gate-last PMOS transistors, and the extracted parameters are compared to poly-Si/SiO 2 reference transistors. The optimized films grown at 400 -C with a thickness of 20 nm exhibit a resistivity of 400 mV cm.

show abstract

“…Up to now, state of the art coatings for surface protection are ternary or quaternary coatings based on TiAl(Y)N or CrAl(Y)N which are stable up to 1000°C [1,2]. For temperatures above 1000°C there exist still no reliable coating concepts which guarantee stability against chemical decomposition, structural changes and loss of mechanical properties.…”

Section: Introductionmentioning

confidence: 98%