Low-temperature organometallic vapor phase epitaxial growth of CdTe using a new organotellurium source

Abstract

The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250 °C, using a new tellurium source, dimethylditelluride. The compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium-containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400 °C, thus making completely thermally driven chemical vapor deposition of II-VI compounds possible at much lower temperatures.

Deposition of topological insulator Sb2Te3 films by an MOCVD process

“…An almost linear increasing growth rate with increasing substrate temperature was found in the temperature range from 350 C to 400 C, reaching 750 nm in 15 min at 400 C. These ndings point to a kinetically-controlled growth process, which we have also recently reported for the MOCVD deposition of Sb 2 Te 3 lms using (Et 2 Sb) 2 Te as a single source precursor. 56 The chemical composition (EDX) and the crystallinity (XRD) of the resulting Sb 2 Te 3 lms were not affected by the increasing substrate temperature, whereas the morphology of the Sb 2 Te 3 lms changed signicantly. Sb 2 Te 3 lms deposited at 350 C ( Fig.…”

“…i-Pr 3 Sb has been used in the past for the CVD-deposition of GeSb 2 Te 4 phase change materials, [49][50][51] whereas Et 2 Te 2 has not been used as a CVD precursor, to date. To the best of our knowledge, dimethyl ditellane Me 2 Te 2 is the only ditellane that has been used as a MOCVD-precursor, to date, 52,53 but it suffers from a relatively low vapour pressure. We carefully investigated the distinctive role of different substrates and substrate temperatures on the growth of the antimony telluride lms, which were analyzed by energy dispersive X-ray analysis (EDX) and Auger spectroscopy, powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).…”

Van der Waals epitaxial MOCVD-growth of (BixSb1−x)2Te3(0 <x< 1) films

“…Et2Te2 was suggested to decompose in a two-step mechanism as was also reported by Kisker et al for Me2Te2. [62] First, Et2Te2 disproportiones into elemental tellurium and diethyl tellane, which then thermally degrades at higher temperature, leading to a high tellurium concentration at the growth front. i-Pr3Sb and Et3Bi were used as Sb and Bi precursor due to their comparable decomposition temperatures of roughly 250 °C and 230 °C, respectively.…”

Surface morphology, electrical and optical properties n-type doped MOCVD grown GaSb using dimethyltellurium

“…The absorption coefficient strongly depends on the free carrier concentration. The absorption spectra (1) of the GaSb sample is shifted towards lower energies due to the effective bad gap shrinkage resulting from the merger of the acceptor band and va-lence band [18,19]. However, the energy shift for band edge absorption for the GaSb with low concentration of DMTe is very small due to low hole concentration.…”