Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior

Jeong, Hwan-Seok; Park, Min-Jae; Kwon, Soo-Hun; Joo, Hyo‐Jun; Song, Sang-Hun; Kwon, Hyuck‐In

doi:10.1016/j.ceramint.2018.06.189

Cited by 47 publications

(16 citation statements)

References 61 publications

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“…SnO-SnO 2 composite thin lms have been shown to possess superior NO 2 sensing ability, and the formation of the SnO-SnO 2 junctions at the thin-lm surface dominates their gas-sensing ability. 10 Sol-gel-derived SnO 2 -TiO 2 composite thin lms exhibit improved photodegradation ability for methyl orange, with an optimal phase content ratio. 11 Therefore, incorporating other oxide phases into the SnO 2 matrix to form SnO 2 -based composite lms for enhanced gassensing and photodegradation seems promising.…”

Section: Introductionmentioning

confidence: 99%

Crystal phase content-dependent functionality of dual phase SnO₂–WO₃nanocomposite filmsviacosputtering crystal growth

Liang

Chao

2019

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

Crystal phase content-dependent functionality of dual phase SnO₂–WO₃nanocomposite filmsviacosputtering crystal growth

Liang

Chao

2019

RSC Adv.

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“…The sensor's response/ recovery time was 165 s/329 s, respectively. 19 In another study, Li et al used a hydrothermal approach to create a SnO 2 −SnO nanostructure with p−n heterojunction. They developed a gassensor device with a good response of 19.1 for 100 ppm NO 2 gas at 50 °C and a low LOD of roughly 0.1 ppm.…”

Section: Resultsmentioning

confidence: 99%

“…22 Tin monoxide (SnO) is p-type material and has direct and indirect bandgaps of 2.5−3.4 and 0.7 eV, respectively. 19 High hole mobility in SnO is due to the hybridization of the Sn 5s and O 2p orbitals. 23 As we know, SnSe shows p-type to n-type switching when doped with other materials.…”

Section: Introductionmentioning

confidence: 98%

Temperature-Dependent n–p–n Switching and Highly Selective Room-Temperature n-SnSe₂/p-SnO/n-SnSe Heterojunction-Based NO₂ Gas Sensor

Rani

Kumar

Garg

et al. 2022

ACS Appl. Mater. Interfaces

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Many toxic gases are mixed into the atmosphere because of increased air pollution. An efficient gas sensor is required to detect these poisonous gases with its ultrasensitive ability. We employed the thermal evaporation method to deposit an n-SnSe2/p-SnO/n-SnSe heterojunction and observed a temperature-dependent n–p–n switching NO2 gas sensor with high selectivity working at room temperature (RT). The structural and morphological properties of the material were studied using the characterization techniques such as XRD, SEM, Raman spectroscopy, XPS, and HRTEM, respectively. At RT, the device response was 256% for 5 ppm NO2. The response/recovery times were 34 s/272 s, respectively. The calculated limit of detection (LOD) was ∼115 ppb with a 38% response. The device response was better with NO2 gas than with SO2, NO, H2S, CO, H2, and NH3. The mechanism of temperature-dependent n–p–n switching, fast response, recovery, and selective detection of NO2 at RT has been discussed on the basis of physisorption and charge transfer. Thus, this work will add a new dimension to 2D materials as selective gas detectors at room temperature.

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“…So, these features make SnO an encouraging candidate and a promising material for next-generation transparent flexible electronics [2]. Moreover, it's a good candidate for use in solar cells, electrochromic devices, and as a transparent conductive oxide (TCO) [8][9][10][11]. Furthermore, SnO is used as a gas sensor owing to its high sensitivity to low gas concentrations [12].…”

Section: Introductionmentioning

confidence: 99%

Morphological, structural, and optical properties of flexible Tin Oxide(II) thin film via thermal evaporation technique

et al. 2022

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Tin oxide compounds have been highly studied due to their important properties. Tin Oxide (II) SnO compound is considered an ideal p-type conductive material, with large p-type carrier mobility. It is getting a lot of attention in next-generation electronic applications. In this work, the SnO thin film was deposited on the polyethylene terephthalate (PET) substrate by the thermal evaporation method. The X-ray diffraction pattern revealed the amorphous structure of the SnO/PET thin film. The purity of the SnO/PET film was confirmed using the Raman spectrum. An atomic force microscope was carried out to investigate the topography (roughness and particle size) of the obtained SnO thin film. The optical band gap $$E_{{\text{g}}}^{{{\text{Opt}}}}$$ E g Opt for SnO/PET thin film in the absorption region was estimated using Tauc’s equation. The refractive index for the SnO/PET thin film was estimated at the normal dispersion range by a single oscillator model. The dielectric optical properties of the SnO/PET thin film were estimated. The calculated third-order nonlinear susceptibility χ(3) and nonlinear refractive index n(2) were in the order of ~ 10−10 and ~ 10−9esu, respectively, within the photon energy range (0.5 to 4 eV). The Sheik–Bahae model was used to determine the nonlinear absorption coefficient βc for SnO/PET thin film. Based on these detailed results, the high nonlinear optical parameters pave the way for the probability of using the SnO/PET in flexible optoelectronics devices. Graphical abstract

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Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior

Cited by 47 publications

References 61 publications

Crystal phase content-dependent functionality of dual phase SnO₂–WO₃nanocomposite filmsviacosputtering crystal growth

Crystal phase content-dependent functionality of dual phase SnO₂–WO₃nanocomposite filmsviacosputtering crystal growth

Temperature-Dependent n–p–n Switching and Highly Selective Room-Temperature n-SnSe₂/p-SnO/n-SnSe Heterojunction-Based NO₂ Gas Sensor

Morphological, structural, and optical properties of flexible Tin Oxide(II) thin film via thermal evaporation technique

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Low temperature NO2 sensing properties of RF-sputtered SnO-SnO2 heterojunction thin-film with p-type semiconducting behavior

Cited by 47 publications

References 61 publications

Crystal phase content-dependent functionality of dual phase SnO2–WO3nanocomposite filmsviacosputtering crystal growth

Crystal phase content-dependent functionality of dual phase SnO2–WO3nanocomposite filmsviacosputtering crystal growth

Temperature-Dependent n–p–n Switching and Highly Selective Room-Temperature n-SnSe2/p-SnO/n-SnSe Heterojunction-Based NO2 Gas Sensor

Morphological, structural, and optical properties of flexible Tin Oxide(II) thin film via thermal evaporation technique

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Product

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Crystal phase content-dependent functionality of dual phase SnO₂–WO₃nanocomposite filmsviacosputtering crystal growth

Crystal phase content-dependent functionality of dual phase SnO₂–WO₃nanocomposite filmsviacosputtering crystal growth

Temperature-Dependent n–p–n Switching and Highly Selective Room-Temperature n-SnSe₂/p-SnO/n-SnSe Heterojunction-Based NO₂ Gas Sensor