Low temperature nanoscale electronic transport on the MoS2 surface

Abstract

Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS 2 ) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation between the tips is controllably varied and measured using a high resolution scanning electron microscope. The MoS 2 surface shows a surface electronic gap (E S ) of 1.4eV measured at a probe separation of 50nm. Furthermore, the two-probe resistance measured outside the electronic gap shows 2D-like behavior with the twoprobe separation.

Atomic Layer Deposited MoS 2 as a Carbon and Binder Free Anode in Li-ion Battery

“…1. Thin film MoS 2 was demonstrated in a variety of electronic applications [7,8]. Lately, MoS 2 also drew considerable attention for its application as anode material in Liion battery [9][10][11][12][13][14][15][16].…”

Imaging, single atom contact and single atom manipulations at low temperature using the new ScientaOmicron LT-UHV-4 STM

“…independance electronically controllable relay to switch on and off the sample stage ground [15]. In that case, multiple tips electrical floating measurements are possible independent of each STM I-V convertor (and of the matrix controllers) via also a specific electronic switch per tip.…”

“…We will describe here only one set of experimental data in this direction. The results presented below open the way for an atomic scale generalization of the 2 probes I-V measurement performed recently on the MoS2 surface with an inter-tip distance around 100 nm [15]. Those 2 probes I-V measurements were recorded on a first generation 4 probes machine with no atomic resolution ability per scanner [25].…”

“…This is for example the case for atomic scale transport measurements in a planar configuration on a surface [15], for transport measurements along dangling bond (DB) atomic wires atom by atom constructed on a passivated semi-conductor surface [16][17][18][19] and for molecule mechanics with the expected measurement of the motive power of a single molecule motor [20,21]. For example, a complete test of the functioning of the recent atom by atom constructed NOR/OR Boolean logic gate on Si(1 0 0)H [22] is demanding at least 4 atomic scale electrical access to this gate.…”

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

“…The significance of such materials has been increasingly recognized with the inevitable slow-down in CMOS scaling when the lithography scale approaches atomic dimension. So far, 2D semiconductors have been largely acquired through experimental research focusing on the exfoliated thin films from bulk crystals (including the "scotch tape" method and lithium-based intercalation) for the study of physical and material properties, such as the band structure [1][2][3][4], valleytronics, and spintronics [5][6][7][8], electronic and optical properties [9][10][11], doping [12,13], strain, temperature dependence [14][15][16] and heterostructures [17,18]. Mechanical exfoliation has been proved to be a fast and easy way to fabricate high crystal quality few-layer or even single-layer 2D samples, since these atomic layers are bonded by van der Waals interactions.…”