Low temperature growth of reactive partially ionized beam deposited AlN films

Role of charge particles irradiation on the deposition of AlN films using plasma focus device

“…A strong absorption peak centred at $667 cm À 1 is associated with Al-N bond. This result is consistent with the literature [41,43] and confirms the formation of AlN films. The peak intensity is associated with Al-N bond density because of more diffusion of nitrogen into the AlN film [44].…”