Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications

Tsao, Chao-Yang; Weber, J.; Campbell, P.; Widenborg, Per I.; Song, Dengyuan; Green, Martin A.

doi:10.1016/j.apsusc.2009.03.035

Cited by 84 publications

(78 citation statements)

References 36 publications

(50 reference statements)

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“…The wavenumber of the Raman peak is the fingerprint used to distinguish materials -as each ionic group has its own unique wavenumber under laser excitation [10]. FWHM is considered to be relevant to the crystallisation degree of the analytes [33], i.e., its enlargement would suggest the weakening of the crystallisation. On the other hand, the other two features, i.e., peak height and peak area, are both related to the quantitative information of the analytes [34].…”

Section: Raman Data Process 241 Peak Fittingmentioning

confidence: 99%

Characterisation of carbonated Portland cement paste with optical fibre excitation Raman spectroscopy

Yue

Wang

Basheer

et al. 2017

Construction and Building Materials

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This study demonstrates the potential of developing a future Raman spectroscopy-based sensor system for monitoring carbonation of concrete structures. A tailored optical fibre Raman system was developed under the classical 45 degree geometry with a specific optical fibre assembly acting as the laser excitation-path. This system was then employed to characterise the calcium carbonate polymorphs, i.e. calcite and/or aragonite

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Section: Raman Data Process 241 Peak Fittingmentioning

confidence: 99%

Characterisation of carbonated Portland cement paste with optical fibre excitation Raman spectroscopy

Yue

Wang

Basheer

et al. 2017

Construction and Building Materials

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“…[1][2][3] In particular, (111)-oriented Ge provides the highest carrier mobility of Ge transistors and acts as the epitaxial templates for Ge nanowires or spintronics materials. [4][5][6] These applications also require the lowtemperature process to avoid softening glass substrates (<550 C) or breaking underlying integrated circuits (<400 C).…”

mentioning

confidence: 99%

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Toko

Kurosawa

Saitoh³

et al. 2012

Appl. Phys. Lett.

147

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Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties J. Appl. Phys. 112, 084103 (2012) Method for investigating threshold field of charge injection at electrode/dielectric interfaces by space charge observation Appl. Phys. Lett. 101, 172902 (2012) An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulatorsemiconductor capacitors with SiO2/GeO2 bilayer passivation J. Appl. Phys. 112, 083707 (2012) Electron transport properties of carbon nanotube-graphene contacts Appl. Phys. Lett. 101, 153501 (2012) Response to "Comment on 'Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses'" [J. Appl. Phys. 112, 076101 (2012) (111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 C) and the native-oxidized Al (AlO x ) diffusioncontrol layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices. V C 2012 American Institute of Physics. [http://dx

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“…The insert figure in Figure 6(a) shows the full width at half maximum (FWHM) of Raman spectra sharp peak as a function of the annealing temperature. The FWHM is independent on the annealing temperature, whereas the FWHM increases with the annealing temperature decreasing for the solid phase crystallization of a-Ge thin films [19]. This result suggests that Al induced crystallization process is …”

Section: S G Dong Et Al Journal Of Materials Science and Chemical mentioning

confidence: 86%

The Larger Grain and (111)-Orientation Planes of Poly-Ge Thin Film Grown on SiO<sub>2</sub> Substrate by Al-Induced Crystallization

Dong¹,

Zhuang²,

Zeng³

2018

MSCE

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Al-induced crystallization yields the larger grain and (111)-orientation planes of poly-Ge thin film grown on SiO 2 substrate, the (111)-orientation planes of poly-Ge thin film grown on SiO 2 substrate are very important for the superior performance electronics and solar cells. We discussed the 50 nm thickness poly-Ge thin film grown on SiO 2 substrate by Al-induced crystallization focusing on the lower annealing temperature and the diffusion control interlayer between Ge and Al thin film. The (111)-orientation planes ratio of poly-Ge thin film achieve as high as 90% by merging the lower annealing temperature (325˚C) and the GeO x diffusion control interlayer. Moreover, we find the lack of defects on poly-Ge thin film surface and the larger average grains size of poly-Ge thin film over 12 μm were demonstrated by electron backscatter diffraction measurement. Our results turn on the feasibility of fabricating electronic and optical device with poly-Ge thin film grown on SiO 2 substrate.

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Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications

Cited by 84 publications

References 36 publications

Characterisation of carbonated Portland cement paste with optical fibre excitation Raman spectroscopy

Characterisation of carbonated Portland cement paste with optical fibre excitation Raman spectroscopy

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

The Larger Grain and (111)-Orientation Planes of Poly-Ge Thin Film Grown on SiO<sub>2</sub> Substrate by Al-Induced Crystallization

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Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications

Cited by 84 publications

References 36 publications

Characterisation of carbonated Portland cement paste with optical fibre excitation Raman spectroscopy

Characterisation of carbonated Portland cement paste with optical fibre excitation Raman spectroscopy

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

The Larger Grain and (111)-Orientation Planes of Poly-Ge Thin Film Grown on SiO&lt;sub&gt;2&lt;/sub&gt; Substrate by Al-Induced Crystallization

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The Larger Grain and (111)-Orientation Planes of Poly-Ge Thin Film Grown on SiO<sub>2</sub> Substrate by Al-Induced Crystallization