Abstract:Al-induced crystallization yields the larger grain and (111)-orientation planes of poly-Ge thin film grown on SiO 2 substrate, the (111)-orientation planes of poly-Ge thin film grown on SiO 2 substrate are very important for the superior performance electronics and solar cells. We discussed the 50 nm thickness poly-Ge thin film grown on SiO 2 substrate by Al-induced crystallization focusing on the lower annealing temperature and the diffusion control interlayer between Ge and Al thin film. The (111)-orientatio… Show more
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