Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors

Wang, Lifeng; Wu, Bin; Liu, Hongtao; Wang, Hanlin; Su, Yuyu; Lei, Weiwei; Hu, PingAn; Liu, Yunqi

doi:10.1007/s40843-019-9419-0

Cited by 13 publications

(7 citation statements)

References 30 publications

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“…Apart from the substrate conditions, the features in feedback, such as gas composition and pressure, can also have an effective modulation on nucleation density on the polycrystalline substrate. [ 31,50,67–70 ] Hu and co‐workers found the water vapor introduced by bubbling water with carrier gas of H 2 can etch the h‐BN nucleation, so as to reduce the nucleation density. [ 68 ] As a result, the size of single‐crystal domain is up to ≈330 µm on the Cu foil which is 3–5 times larger than that without water vapor.…”

Section: Cvd Growth Of H‐bn Flakes and Filmsmentioning

confidence: 99%

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

et al. 2020

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Atomically thin hexagonal boron nitride (h‐BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D‐material‐based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h‐BN is found to be a natural hyperbolic material in the mid‐infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h‐BN flakes at their proof‐of‐concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large‐scale, high‐quality, atomically thin h‐BN films and heterostructures. Herein, CVD synthesis of atomically thin h‐BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single‐crystal h‐BN film. Meanwhile, epitaxial growth of 2D materials onto h‐BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h‐BN and its heterostructures in optoelectronics and electronics are summarized.

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Section: Cvd Growth Of H‐bn Flakes and Filmsmentioning

confidence: 99%

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

et al. 2020

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“…Graphene, as the thinnest two-dimensional (2D) carbon material with one atom thickness (0.334 nm) [11][12][13][14], has been widely used in many fields. Its unique and stable lattice structure results in excellent thermal conductivity [15,16], electrical conductivity [17][18][19][20], large specific surface area [21][22][23] and facile chemical modification [24][25][26]. Graphene has also been reported to be an excellent support for SACs due to its remarkable properties [27][28][29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Graphene-supported metal single-atom catalysts: a concise review

Ren

et al. 2020

Sci. China Mater.

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Single-atom catalysts (SACs) have become an emerging frontier trend in the field of heterogeneous catalysis due to their high activity, selectivity and stability. SACs could greatly increase the availabilities of the active metal atoms in many catalytic reactions by reducing the size to single atom scale. Graphene-supported metal SACs have also drawn considerable attention due to the unique lattice structure and physicochemical properties of graphene, resulting in superior activity and selectivity for several chemical reactions. In this paper, we review recent progress in the fabrications, advanced characterization tools and advantages of graphene-supported metal SACs, focusing on their applications in catalytic reactions such as CO oxidation, the oxidation of benzene to phenol, hydrogen evolution reaction, methanol oxidation reaction, oxygen reduction reaction, hydrogenation and photoelectrocatalysis. We also propose the development of SACs towards industrialization in the future.

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“…Likewise, Wang et al used monolayer h-BN film synthesized via PECVD strategy at low 500 °C and fabgraphene/h-BN FET devices. [112] More importantly, the graphene/h-BN/SiO 2 /Si FET device showed the carried mobility of 10,500 (hole) and 4,750 (electron) cm 2 V -1 s -1 , respectively, revealing the high quality of the as-grown h-BN film. Apart from monolayer, uniform multilayer h-BN films are also regarded as a promising candidate in FET applications because the thicker films could guarantee excellent dielectric properties and decrease the trap charges.…”

Section: Atomic Bn Layer For Fetmentioning

confidence: 91%

“…Obviously, both K and E b , which mainly depend on the properties of dielectric materials, are critical to define the final performances of the capacitors. [112,113] For dielectric capacitors, the pristine dielectrics usually consist of ceramics and glasses materials such as Al 2 O 3 , HfO 2 , BaTiO 3 , and AlN. Although these materials possess high K, however, the ceramics and glasses are normally stiffy and brittle, hence bringing difficulty in electronics processing such as ink printing.…”

Section: Bn Nanocomposites For Dielectric Devicesmentioning

confidence: 99%

Two‐dimensional Boron Nitride for Electronics and Energy Applications

Wang

Zhang

Wang

et al. 2021

Energy & Environ Materials

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Two‐dimensional (2D) boron nitride (BN), the so‐called “white graphene,” has demonstrated a great potential in various fields, particularly in electronics and energy, by utilizing its wide bandgap (~5.5 eV), superior thermal stability, high thermal conductance, chemical inertness, and outstanding dielectric properties. However, to further optimize the performances from the view of structure–property relationship, the determinative factors such as crystallite sizes, layer thickness, dispersibility, and surface functionalities should be precisely controlled and adjusted. Therefore, in this review, the synthesis and functionalization methods including “top‐down” and “bottom‐up” strategies, and non‐covalent and covalent modifications for 2D BN are systematically classified and discussed at first, thus catering for the requirements of versatile applications. Then, the progresses of 2D BN applied in the fields of microelectronics such as field‐effect transistors and dielectric capacitors, energy domains such as thermal energy management and conversion, and batteries and supercapacitors are summarized to highlight the importance of 2D BN. Notably, these contents not only contain the state‐of‐the‐art 2D BN composites, but also bring the current novel design of 2D BN‐based microelectronic units. Finally, the challenges and perspectives are proposed to better broaden the scope of this material. Therefore, this review will pave an all‐around way for understanding, utilizing, and applying 2D BN in future electronics and energy applications.

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Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors

Cited by 13 publications

References 30 publications

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Graphene-supported metal single-atom catalysts: a concise review

Two‐dimensional Boron Nitride for Electronics and Energy Applications

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