Low-Temperature Growth of Carbon Nanotubes from the Catalytic Decomposition of Carbon Tetrachloride

Vohs, Jason K.; Brege, Jonathan J.; Raymond, Jeffery E.; Brown, Allan E.; Williams, Gwyneth; Fahlman, Bradley D.

doi:10.1021/ja0478227

Cited by 59 publications

(38 citation statements)

References 10 publications

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“…According to them, the fast growth rates of SWNTs during CVD synthesis can only be explained by surface diffusion of hydrocarbons on the catalyst support or along the CNTs. Vohs et al 34 used metal (Fe)-encapsulated dendrimers as catalysts for low-temperature growth of CNTs. MWNTs were synthesized at 175 C via decomposition of carbon tetrachloride in supercritical carbon dioxide by them.…”

Section: Chemical Vapor Deposition (Cvd) Techniquementioning

confidence: 99%

Carbon Nanotube-Based Sensors

Sinha¹,

Ma²,

Yeow³

2006

j nanosci nanotechnol

459

230

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Sensors continue to make significant impact in everyday life. There has been a strong demand for producing highly selective, sensitive, responsive, and cost effective sensors. As a result, research emphasis is on developing new sensing materials and technologies. Carbon nanotubes (CNTs) have many distinct properties that may be exploited to develop next generation of sensors. This manuscript reviews the distinct physical, electronic, and mechanical properties of CNTs. The main thrust of this review is to highlight the present and future research and development work in the area of carbon nanotube sensors for real-world applications. The technical challenges associated with CNT-based sensors, which remain to be fully addressed, have also been outlined at the end of the manuscript. This review aims to act as a reference source for researchers to help them in developing new applications of CNT-based sensors.

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Section: Chemical Vapor Deposition (Cvd) Techniquementioning

confidence: 99%

Carbon Nanotube-Based Sensors

Sinha¹,

Ma²,

Yeow³

2006

j nanosci nanotechnol

459

230

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“…The G4-NH 2 dendrimer has an ethylene diamine core and was supplied as a 10% methanol solution from Aldrich (www.aldrich.com). Using a recipe adapted from previous work [19], the catalyst solution was prepared by mixing a 20-mL solution of the G4-NH 2 dendrimer and FeCl 3 Á6H 2 O with a G4-NH 2 :Fe mole ratio of 1:46. The catalyst was transferred to the substrate surfaces by dip coating for 10 s and calcined at 550 C for 10 min to expose a monolayer of Fe 2 O 3 nanoparticles [20].…”

Section: Sample Fabricationmentioning

confidence: 99%

Carbon Nanotube Array Thermal Interfaces for High-Temperature Silicon Carbide Devices

Cola

Fisher

et al. 2008

Nanoscale and Microscale Thermophysical Engineering

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Follow this and additional works at: http://docs.lib.purdue.edu/nanopub This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact epubs@purdue.edu for additional information.Cola, Baratunde A.; Xu, Xianfan; Fisher, Timothy; Capano, Michael A.; and Amama, Placidus B., "Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices" (2008 Full terms and conditions of use: http://www.informaworld.com/terms-and-conditions-of-access.pdf This article may be used for research, teaching and private study purposes. Any substantial or systematic reproduction, re-distribution, re-selling, loan or sub-licensing, systematic supply or distribution in any form to anyone is expressly forbidden.The publisher does not give any warranty express or implied or make any representation that the contents will be complete or accurate or up to date. The accuracy of any instructions, formulae and drug doses should be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claims, proceedings, demand or costs or damages whatsoever or howsoever caused arising directly or indirectly in connection with or arising out of the use of this material. , and the room-temperature thermal resistances of SiC-MWCNT-Ag interfaces at 69-345 kPa as well as the thermal resistances of SiC-MWCNT-Ag interfaces up to 250 C (at 69 kPa) have been measured using a photoacoustic technique. The SiC-MWCNT-Ag interfaces with MWCNTs grown on the C-face of SiC achieved thermal resistances less than 10 mm 2 K/W, which is lower than the resistances of MWCNT interfaces grown using the same catalysis and growth methods on the Si-face of SiC and Ti-coated SiC. The thermal resistances of the SiC-MWCNT-Ag interfaces exhibit weak temperature dependence in the measured range, indicating that the interfaces are suitable for high-temperature power electronics applications. CARBON NANOTUBE ARRAY THERMAL INTERFACES FOR HIGH-TEMPERATURE SILICON CARBIDE DEVICES

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“…The main reason is that catalysts can not be restructured and activated, and reactive species can not be dissociated and reacted with catalysts at such low temperatures. To date, three routes have been attempted to lower the CNT growth temperature: 1. using various carbon feedstocks with lower dissociation temperature and high reaction activity with catalysts; 4 2.…”

mentioning

confidence: 99%

High-rate low-temperature growth of vertically aligned carbon nanotubes

et al. 2010

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We report the high-rate and low-temperature growth of vertically aligned carbon nanotubes (CNTs) by a photo-thermal chemical vapour deposition (PTCVD) method using a Ti/Fe bi-layer film as the catalyst. The growth temperature is as low as 370 °C and the growth rate is up to 1.3 μm/min, at least 8 times faster than the reported values by traditional thermal CVD methods. Transmission electron microscopy observations reveal that as-grown CNTs are uniformly made of crystalline 5 − 6 graphene shells with an approximately 10 nm outer diameter and a 5 − 6 nm inner diameter. The low-temperature rapid growth of CNTs is strongly related with the unique top-down heating mode of PTCVD and the formation of Ti/Fe bimetallic solid solution. The present study will advance the deployment of CNTs as interconnects in nanoelectronics, through a CMOS-compatible low-temperature deposition method.

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Low-Temperature Growth of Carbon Nanotubes from the Catalytic Decomposition of Carbon Tetrachloride

Cited by 59 publications

References 10 publications

Carbon Nanotube-Based Sensors

Carbon Nanotube-Based Sensors

Carbon Nanotube Array Thermal Interfaces for High-Temperature Silicon Carbide Devices

High-rate low-temperature growth of vertically aligned carbon nanotubes

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