Low temperature growth of carbon nanotubes on printing electrodes by MPCVD

Chen, Kuang-Chung; Chen, Chia–Fu; Chiang, Jih-Shun; Hwang, Chi Shin; Chang, Yuchou; Lee, Cheng-Chung

doi:10.1016/j.tsf.2005.07.085

Cited by 10 publications

(7 citation statements)

References 24 publications

(26 reference statements)

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“…For FED application, the growth temperature should be below 550°C to avoid the deformation of the sodalime glass substrate [17]. Recently, many studies for low temperature growth of multi-wall CNTs by CVD methods have been reported [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

The characteristics of carbon nanotubes grown at low temperature for electronic device application

Park

Lee

2013

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

The characteristics of carbon nanotubes grown at low temperature for electronic device application

Park

Lee

2013

Thin Solid Films

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“…The synthesis is performed either on a catalytic supported substrate [25] or in the gas phase [26] in the presence of plasma species, ions, electrons, neutrals and photons. The arc discharge [27,28], plasma torches [29], laser vaporization [30][31][32] and plasma enhanced chemical vapor deposition (PECVD) methods [4,5,[33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52] belong to this subclass.…”

Section: Introductionmentioning

confidence: 99%

Plasma techniques for nanostructured carbon materials synthesis. A case study: carbon nanowall growth by low pressure expanding RF plasma

Vizireanu

Stoica

Luculescu

et al. 2010

Plasma Sources Sci. Technol.

113

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A short description of approaches for carbon nanostructures synthesis is made and the advantages of using plasma during the growth are presented. As a particular example of a plasma based technique we detail the process of downstream carbon nanowall (CNW) synthesis by a radiofrequency expanding plasma beam. The technique combines magnetron sputtering for catalyst deposition and plasma enhanced chemical vapor deposition (main gas: argon, active gas: hydrogen, precursor gas: acetylene) for carbon growth in a single reactor. The analysis focuses on the correlation between the material properties and the plasma characteristics measured at different points along the flow axis, aiming to reveal the importance of plasma species in the growth process. The material properties were investigated by scanning and transmission electron microscopy, whereas the plasma data were obtained by optical emission spectroscopy, Langmuir probes and mass spectrometry. CNWs with a large area and well isolated from each other are obtained at an optimum distance from the precursor injection point where the plasma presents an enhanced content of carbon nanoclusters. The possible processes responsible for the growth are discussed.

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“…Carbon nanotube (CNT) based field emitters have been reported to exhibit high emission current with long-term stability, resulting from their high aspect ratio with small tip radius of curvature and high chemical inertness [1][2][3]. Thus a large amount of research is being carried out to utilize their excellent properties in practical applications, such as field emission displays (FED) [4,5] and x-ray sources [6,7].…”

Section: Introductionmentioning

confidence: 99%

The high contrast ratio and fast response time of a liquid crystal display lit by a carbon nanotube field emission backlight unit

Choi

Lee

et al. 2008

Nanotechnology

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We report on the fabrication of a carbon nanotube field emission backlight unit (CNT-BLU) and its application for liquid crystal displays (LCD). The CNT-BLU was operated with locally controllable luminance and impulse-type scanning. The local luminance control, which is based on a very small block size of 1 cm(2), consisted of local dimming and local brightening. This resulted in the contrast ratio of the LCD-TV to be as high as 300 000:1. A fast response time of ∼5.7 ms was also achieved from the LCD-TV lit by CNT-BLU, originating from the impulse-type scanning. In addition, the CNT-BLU showed long-term emission stability and high luminance uniformity.

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Low temperature growth of carbon nanotubes on printing electrodes by MPCVD

Cited by 10 publications

References 24 publications

The characteristics of carbon nanotubes grown at low temperature for electronic device application

The characteristics of carbon nanotubes grown at low temperature for electronic device application

Plasma techniques for nanostructured carbon materials synthesis. A case study: carbon nanowall growth by low pressure expanding RF plasma

The high contrast ratio and fast response time of a liquid crystal display lit by a carbon nanotube field emission backlight unit

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