Abstract:Low-temperature (LT) grown GaAs in either an as-grown or annealed condition has been used as a gate dielectric for GaAs field effect transistors (FET). It was found that both types of LT GaAs layers can effectively passivate the device surface states, eliminate hysteresis and light induced effects, and dramatically increase the breakdown voltage, V BD , between source and drain contacts of the FETs. V BD was found to increase on cooling the as-grown LT GaAs FET with a low activation energy, typically ∼ 0.15 e… Show more
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