Low-temperature-grown GaAs coplanar waveguide single-photon/two photon absorption autocorrelator

Montoya, Juan; Hu, Qing

doi:10.1063/1.1644025

Cited by 11 publications

(7 citation statements)

References 19 publications

(26 reference statements)

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“…The effects of the two parts in the dual-loss-modulated QML laser should be considered separately. As we know, the saturated absorption mechanism of GaAs substrate in the dual-loss-modulated QML laser can be analyzed from its single-photon absorption (SPA) and two-photon absorption (TPA) simultaneously [23]. The effects of the In 0.25 Ga 0.75 As layer can be described as the average loss of C-SESAM.…”

Section: B Saturable Absorption Mechanism Of C-sesammentioning

confidence: 99%

Experimental and Theoretical Investigation on Subnanosecond Pulse Characteristics From Doubly QML Nd:Lu0.5Y0.5VO4 Green Laser

Tang

Zhao

Yang

et al. 2015

IEEE J. Quantum Electron.

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Using the mixed crystal Nd:Lu 0.5 Y 0.5 VO 4 as laser media, an Laser Diode-pumped dual-loss-modulated Q-switched mode-locked (QML) laser generating subnanosecond pulses with adjustable kilohertz repetition rate is presented. This pulse laser system is simultaneously modulated by an electro-optic (EO) modulator and a central semiconductor saturable absorption mirror. Because the repetition rate of the Q-switched envelope in this laser depends on the modulation frequency of the EO modulator, single mode-locking pulse with subnanosecond width exists underneath a Q-switched envelope with kilohertz repetition rate can be obtained. The experimental results show that the pulsewidth of the subnanosecond pulses decreases with the increasing pump power and the shortest pulse generated at 1 kHz was 460 ps with pulse energy of as high as 174 µJ, corresponding to a peak power of 378.3 kW. The rate equation theory is used to describe the dual-loss-modulated QML laser. By considering the Gaussian distribution of the intracavity photon density and the influence of the continuous pump rate, the coupled rate equations for the dual-loss-modulated QML lasers are given. The key parameters are determined, and the numerical solutions of the equations are basically in accordance with the experimental results.Index Terms-Dual-loss-modulation, Nd:Lu 0.5 Y 0.5 VO 4 crystal, rate equation, subnanosecond pulse. 0018-9197

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Section: B Saturable Absorption Mechanism Of C-sesammentioning

confidence: 99%

Experimental and Theoretical Investigation on Subnanosecond Pulse Characteristics From Doubly QML Nd:Lu0.5Y0.5VO4 Green Laser

Tang

Zhao

Yang

et al. 2015

IEEE J. Quantum Electron.

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“…The tabular dependence of the K8 glass refraction index versus wavelength is known [17], which permits to find the dependence δ max versus wavelength (Fig. 3) by the formula (4). The wavelength, at exceeding of which δ max becomes less 45, limits the spectral range of rhomb operation like to that the quarter-wave plate does from the side of long waves.…”

Section: Technical Parameters Of Fresnel Rhombimentioning

confidence: 99%

“…where r is the distance from the center of light beam, r 0 is a radius at the level I = I m /2, I m is the value of intensity at r = 0. In spectroscopic researches, we usually neglect the light intensity when I ≤ I m /e 4 . According to Fig.…”

Section: Technical Parameters Of Fresnel Rhombimentioning

confidence: 99%

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Properties of phase-shifting devices used in researches of nonlinear absorption

Kulish¹

2009

Semicond. phys. quantum electron. optoelectron.

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Formulated in this work are the requirements to the Fresnel rhomb used for light polarization control of high-power lasers. Technical parameters of the rhomb have been given. The calibration procedure of the Fresnel rhomb has been described. The single rhomb is proposed to be utillized for the change of light ellipticity from zero to unity, and block of two rhombi for the turn of polarization plane between zero to 360 degrees.

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“…where R ≈ 0.3 is the reflectivity of the GaAs-air interface, 18) E 0 represents the incident pulse energy of the trigger light, x denotes the transmission distance in the GaAs wafer, which is equal to the thickness of the GaAs wafer, and w = 1=α is the absorption depth of the trigger light. Because every photon absorbed by GaAs can produce one electron-hole pair in the absorption mechanism, the photogenerated carrier density can be given by…”

mentioning

confidence: 99%

Optical absorption mechanism of GaAs photoconductive semiconductor switch

Tian

Shi

2018

Jpn. J. Appl. Phys.

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The output charges of linear and nonlinear semi-insulating GaAs photoconductive semiconductor switches (PCSSs) triggered by a 1064 nm nanosecond pulse laser with an energy of millijoule level are measured under different bias voltages. On the basis of the operation mechanism of the linear PCSS, the photogenerated carrier densities of the PCSS are measured. From the results of the comparison between the measured values and the values determined by different absorption mechanisms, the absorption mechanism of the switch is analyzed. As an important parameter of the avalanching charge domain, the effect of the photogenerated carrier density on the output performance of GaAs PCSSs is discussed.

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Low-temperature-grown GaAs coplanar waveguide single-photon/two photon absorption autocorrelator

Abstract: Articles you may be interested inTransient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for lowtemperature grown GaAs

Cited by 11 publications

References 19 publications

Experimental and Theoretical Investigation on Subnanosecond Pulse Characteristics From Doubly QML Nd:Lu<sub>0.5</sub>Y<sub>0.5</sub>VO<sub>4</sub> Green Laser

Experimental and Theoretical Investigation on Subnanosecond Pulse Characteristics From Doubly QML Nd:Lu<sub>0.5</sub>Y<sub>0.5</sub>VO<sub>4</sub> Green Laser

Properties of phase-shifting devices used in researches of nonlinear absorption

Optical absorption mechanism of GaAs photoconductive semiconductor switch

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