Low-Temperature Formation of Poly-Si_1-xGe_x (x: 0–1) on SiO₂ by Au-Mediated Lateral Crystallization

Abstract

The Au-mediated low-temperature (400 C) crystallization of amorphous-Si 1Àx Ge x (x: 0-1) on SiO 2 has been investigated. A growth velocity exceeding 20 mm/h was obtained for samples in the entire range of Ge fractions (x: 0-1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-Si 1Àx Ge x (x: 0-1) with large areas (>20 mm) were obtained at a low temperature (400 C). This newly developed method has a high potential for fabricating poly-Si 1Àx Ge x (x: 0-1) on a glass substrate.

Resolving microscopic interfaces in Si1−xGexalloy nanowire devices

“…In our case, diffusion mediated by Ni/Au in the Si 70 Ge 30 alloy nanowire occurred at ∼27 nm s −1 , and that mediated by Ni occurred at ∼16 nm s −1 . These values are slightly higher than those in bulk films, but the diffusion depth of metal decreases with increasing Ge concentration [22], and we might expect axial diffusion only, in the case of one-dimensional nanostructures. We also expect lower electrical conductance from Ni-contacted alloy nanowire devices because the conductance is inversely proportional to the channel lengths in diffusive systems.…”

Recent Progress of SiGe Heterostructure Technologies for Novel Devices

“…In line with this, we have been investigating laser annealing (10), solid-phase crystallization (11)(12)(13)(14)(15) and metal-induced lateral crystallization (MILC) (16)(17)(18)(19) of a-SiGe on insulating films. These approaches are schematically summarized in Fig.2.…”

Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

“…In line with this, we have been investigating laser annealing (10), solid-phase crystallization (SPC) (11)(12)(13)(14)(15) and metal-induced lateral crystallization (MILC) (16)(17)(18)(19) of a-SiGe on insulating films. These approaches are schematically summarized in Fig.2.…”