Abstract:In this study, we report a novel vertical diffusion method for fabricating solution-processed quaternary In-Ga-Zn-O (IGZO) (defined as vd-IGZO) thin-film transistors (TFTs). Compared with conventional IGZO (defined as con-IGZO) TFT annealed at 380°C, vd-IGZO thin film is to spin coat Ga 2 O 3 , ZnO and In 2 O 3 binary oxide precursors consecutively and then anneal at 250°C. Finally, the IGZO film with a vertically gradient Ga, Zn, In diffusion is obtained and used as the channel layer of TFTs. The results show… Show more
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