Low-temperature fabrication and random laser action of doped zinc oxide nanoneedles

Thermal stability of electrical properties of ZnO:Al films deposited by room temperature magnetron sputtering

“…8(B), it was still inapplicable to fit Zn2p3/2 spectra to more than one peak with an envisioned peak at 1021.5 eV. This decrease of binding energy has been reported to be the result of that more Zn atoms are bound to oxygen atoms [37], which subsequently implies a decrease of Zn interstitials and then the decay of electrical conductivity in our work.…”

Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

“…This suggests that the BEP shift toward a lower energy (− E) seems to be related to the incorporation of oxygen atoms due to the use of O 2 fraction. It was also reported that − E for Zn 2p3/2 implies loss of metallic Zn due to the fact that more zinc atoms are bound to oxygen atoms [29], while − E for O 1s results in the increase of the oxygen atoms [30]. Thus, we conclude that − E for Zn 2p3/2 is an indication of V Zn formation due to decomposition of ZnO and subsequent outdiffusion of Zn, while − E for O 1s is an indication of O i formation due to in-diffusion of O produced by the use of O 2 fraction.…”

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

“…The binding energy of Zn2p3/2 and Zn2p1/2 located at 1025.1 and 1043.3eV. The binding energy of Zn2p3/2 is large, which implies high metallic Zn in the film due to the fact that more zinc atoms are not bound to oxygen atoms [11]. The spectrum of O1s shows a little asymmetry and a binding energy peak located at 529.4eV.…”