Low-Temperature Epitaxy and in-Situ Doping of Silicon Films

Kircher, R.; Furuno, M.; Murota, Junichi; Ono, S.

doi:10.1051/jp4:1991292

Cited by 3 publications

(8 citation statements)

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“…As a result, the solid curves for the C P and growth rate calculated by Eqs. [1]- [3] and [13]- [17] using the values of k P1 , k-P1 , k INC-P1 , b 1 , k SPP1 , k 1P n 0 and K SP1 agree with the experimental data for high P PH3 as shown in Fig. 10.…”

Section: Table IV Modification Of Table I By Reactions Of Sihsupporting

confidence: 77%

“…However, for high P B2H6 region, the experimental growth rate tends to increase slightly with increasing with P B2H6 even for C B of around 10 22 cm −3 , and it was also reported that the Si growth rate increases with B 2 H 6 addition [14][15][16] although the experimental growth rate decreased slightly at 650 °C by the ultraclean CVD processing. 17 As shown in Fig. 7b, the slope of C B for P B2H6 is over 1 for lower P SiH4 , although the slope calculated by Table I is around 1.…”

Section: Pure Si Epitaxial Growthmentioning

confidence: 64%

“…b) These values are independent on the growth rate and P PH3 and are obtained from Eq. [17] in Table VI according to Henry's law. experimental data and the calculated values using the modified Langmuir-type mechanism.…”

Section: Discussionmentioning

confidence: 99%

“…Then k INC-P2 and k INC-P3 are given by Eq. [17] in Table VI, as functions of the P segregation coefficient K SP2 and K SP3 between total site densities Q PP2 and Q PP3 where PH 3 molecules are adsorbed and the concentration of P incorporated in the grown film at Si-Ge and Ge-Ge pair sites, respectively. For middle P PH3 such as around 1 × 10 −3 Pa where the experimental Ge fraction x scarcely changes but the experimental growth rate changes with P PH3 , the values of k -P2 , k -P3 , K SP2 and K SP3 and k SPP2 are obtained by fitting the experimental data of growth rate in Fig.…”

Section: Appendixmentioning

confidence: 99%

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Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si_1−xGe_x Epitaxial Growth

Murota

Ishii

2021

ECS J. Solid State Sci. Technol.

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In-situ doping process of B and P in CVD Si and Si1−xGex (100) epitaxial growth is investigated using SiH4–GeH4–dopant gas (B2H6 or PH3)–H2 gas mixture. For lower dopant gas partial pressure, the in situ doping is explained quantitatively by the Langmuir-type adsorption and reaction at Si–Si, Si–Ge or Ge–Ge pair sites on the (100) surface. For higher B2H6 gas partial pressure (P B2H6), it is proposed that SiH4, GeH4 and B2H6 molecules are adsorbed and react partially at the B-occupied sites where B2H6 molecules have been adsorbed on the (100) surface. For higher PH3 gas partial pressure (P PH3), it is proposed that the in situ doping and Ge incorporation are enhanced by the self-limited adsorption of PH3 molecules and the decomposition of GeH4 at the P-occupied sites where PH3 molecules have been adsorbed on the (100) surface, respectively, and that the decrease of P concentration with increasing P PH3 in high P PH3 region is caused by lower segregation coefficients of P at Si–Ge and Ge–Ge pair sites than that at Si–Si pair sites according to the Henry’s law. Fairly good agreement is obtained between all the experimental data and the modified Langmuir-type mechanism for in situ doping.

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Section: Table IV Modification Of Table I By Reactions Of Sihsupporting

confidence: 77%

Section: Pure Si Epitaxial Growthmentioning

confidence: 64%

Section: Discussionmentioning

confidence: 99%

Section: Appendixmentioning

confidence: 99%

See 2 more Smart Citations

Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si_1−xGe_x Epitaxial Growth

Murota

Ishii

2021

ECS J. Solid State Sci. Technol.

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“…lb) a thickness of the B-doped layer of 1.6 nm was estimated. Typical values for exponential decay length obtained by CVD are in the region of a few nmldec (e. g. [3,7]). The value of 1.7 nddec represents an extremely sharp B doping profile in Si for CVD and MBE [2,8].…”

Section: Kinetically Controlled Incorporation Of Boronmentioning

confidence: 99%

Delta Doping in Si and SiGe by LP(RT)CVD

et al. 1995

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Abstract. Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD). Two different approaches for the delta doping were used. In the first case the dopants were incorporated into the growing film. The process was kinetically controlled. By this way B-delta-layers with a steepness of 1.7 nmldecade were measured by Secondary ion mass spectrometry (SIMS) for the profiles prepared. In the second case the doping was performed during an interruption of layer growth. The process was controlled by the surface adsorption equilibrium of dopants. Using this regime B-delta-layers of 1 monolayer and with a steepness of 1.4 nmldecade were obtained in SiGe. The values of the estimated steepness represent an extremely sharp profile for a CVD process. Structural properties of the deltadoped layers were investigated using cross sectional transmission electron microscopy (XTEM). The steepness estimated by SIMS was compared with high depth resolution spreading resistance (SR) measurements which detect the electrical active boron only.

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Langmuir-Type Mechanism for In-Situ Doping in CVD Silicon-Germanium Epitaxial Growth

Murota

2019

ECS Trans.

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In-situ doping process of B and P in CVD Si, Si1-xGex and Ge epitaxial growth is reviewed using a modified Langmuir-type mechanism. For lower dopant gas (B2H6 or PH3) partial pressure, growth rate, Ge fraction and dopant (B or P) concentration in the films are explained by a Langmuir-type mechanism. For higher B2H6 gas partial pressure, it is proposed that SiH4, GeH4 and B2H6 molecules are absorbed and react partially at the B-occupied sites where B2H6 molecules have been adsorbed on (100) surface. For higher PH3 gas partial pressure, it is proposed that GeH4 molecules decomposes and PH3 molecules are adsorbed at the P-occupied sites and that P atoms are incorporated into the grown film according to the Henry’s law. Fairly good agreement is obtained between all experimental data and the modified Langmuir-type mechanism for in-situ doping.

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Low-Temperature Epitaxy and in-Situ Doping of Silicon Films

Cited by 3 publications

References 0 publications

Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si_1−xGe_x Epitaxial Growth

Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si_1−xGe_x Epitaxial Growth

Delta Doping in Si and SiGe by LP(RT)CVD

Langmuir-Type Mechanism for In-Situ Doping in CVD Silicon-Germanium Epitaxial Growth

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Low-Temperature Epitaxy and in-Situ Doping of Silicon Films

Cited by 3 publications

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Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si1−xGex Epitaxial Growth

Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si1−xGex Epitaxial Growth

Delta Doping in Si and SiGe by LP(RT)CVD

Langmuir-Type Mechanism for In-Situ Doping in CVD Silicon-Germanium Epitaxial Growth

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Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si_1−xGe_x Epitaxial Growth

Langmuir-Type Mechanism for In-Situ Doping in CVD Si and Si_1−xGe_x Epitaxial Growth