Low temperature epitaxial growth of Ge on CaF2 buffered cube-textured Ni

Gaire, C.; Palazzo, Joseph; Bhat, Ishwara B.; Goyal, A.; Wang, G.-C.; Lu, Toh‐Ming

doi:10.1016/j.jcrysgro.2012.01.035

Cited by 10 publications

(2 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…31 The grain sizes in Ge/CeO 2 / Ni-W are 100-300 times larger than that obtained on Ge/CaF 2 / Ni foil or on Ge/CaF 2 /glass reported before. 20,21 XRD measurements were conducted to determine the crystallographic orientation and the epitaxial relationship of the CeO 2 buffer layer and Ge lm. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In another approach, biaxially textured Ge (111) with grain size 50-200 nm was obtained on rolled cube-textured Ni (200) substrates using CaF 2 (111) as an intermediate layer. 21 The biaxial cube texture in Ni substrates was obtained by rolling assisted biaxially textured substrates (RABiTS) technique. In all of the studies, (111) orientation of Ge with small grain sizes instead of the technologically important (00l) orientation was reported.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Large grained single-crystalline-like germanium thin film on flexible Ni–W tape

et al. 2014

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Large grained single-crystalline-like germanium thin film on flexible Ni–W tape

et al. 2014

View full text Add to dashboard Cite

show abstract

Dynamic Oblique Angle Deposition of Nanostructures for Energy Applications

Wang

Bhat

2013

Advanced Ceramic Coatings and Materials for Extreme Environments III

View full text Add to dashboard Cite

High‐Performance Flexible Thin‐Film Transistors Based on Single‐Crystal‐Like Germanium on Glass

Asadirad

Gao

Dutta

et al. 2016

Adv Elect Materials

View full text Add to dashboard Cite

Thin‐film transistors (TFTs) grown on a flexible glass substrate using single‐crystal‐like germanium (Ge) channel to simultaneously achieve high carrier mobility, high performance characteristics, mechanical flexibility, and cost‐effective large‐area manufacturing are reported. High‐crystalline‐quality materials of biaxially textured CeO2 deposited at room temperature by ion‐beam‐assisted deposition followed by single‐crystal‐like Ge epitaxially grown at 550 °C by plasma‐enhanced chemical vapor deposition on an amorphous substrate are developed. p‐type Ge with {111} surface shows well‐aligned grains in both out‐of‐plane and in‐plane directions, as characterized by reflection high‐energy electron diffraction, X‐ray diffraction, and Raman spectroscopy. The material structures are fabricated to transistor devices with top‐gate geometry. The devices (channel width and length = 80 and 14 μm) exhibit performance characteristics with on/off ratio of ≈106, a field‐effect mobility of ≈105 cm2 V−1 s−1, and saturation current levels of ≈3.5 mA, which are significantly higher than performance metrics of other state‐of‐the‐art TFTs based on amorphous Si, organic semiconductors, and semiconducting oxides. This development can open a new avenue for next‐generation TFTs beyond the display applications.

show abstract

Low temperature epitaxial growth of Ge on CaF2 buffered cube-textured Ni

Cited by 10 publications

References 28 publications

Large grained single-crystalline-like germanium thin film on flexible Ni–W tape

Large grained single-crystalline-like germanium thin film on flexible Ni–W tape

Dynamic Oblique Angle Deposition of Nanostructures for Energy Applications

High‐Performance Flexible Thin‐Film Transistors Based on Single‐Crystal‐Like Germanium on Glass

Contact Info

Product

Resources

About