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1999
DOI: 10.1016/s0040-6090(99)00120-0
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Low temperature epitaxial growth of CeO2(110) layers on Si(100) using electron beam assisted evaporation

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Cited by 28 publications
(15 citation statements)
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“…The essence of mechanism lies in a direct interaction of n-CeO 2 with both the polymer host and the conducting species (i.e., Li + /ClO 4 − ) in the composite matrix. This interaction, evidenced from FTIR analysis, seems convincing in view of very high permittivity of n-CeO 2 (~26) [35] in comparison to ε r~3 -4 for the host polymer holding cations at its electron rich carbonyl oxygen sites (C Ö). In addition, the hard Lewis acid character of n-CeO 2 acts as a catalyst for filler interaction with the polymer host at its electron rich site as well as with the anion ClO 4 − in the matrix that acts as the Lewis base.…”
Section: Discussionmentioning
confidence: 65%
“…The essence of mechanism lies in a direct interaction of n-CeO 2 with both the polymer host and the conducting species (i.e., Li + /ClO 4 − ) in the composite matrix. This interaction, evidenced from FTIR analysis, seems convincing in view of very high permittivity of n-CeO 2 (~26) [35] in comparison to ε r~3 -4 for the host polymer holding cations at its electron rich carbonyl oxygen sites (C Ö). In addition, the hard Lewis acid character of n-CeO 2 acts as a catalyst for filler interaction with the polymer host at its electron rich site as well as with the anion ClO 4 − in the matrix that acts as the Lewis base.…”
Section: Discussionmentioning
confidence: 65%
“…However, ceria thin films on Si(100) generally produced CeO 2 (110) surfaces. [138][139][140][141][142] Growth of CeO 2 (100) could be induced by biasing the Si(100) substrate during deposition by magnetron sputtering [143] or by irradiating the Si(100) substrate with an electron beam during deposition. [144] There have only been a few reported examples of growing CeO 2 ( (100) was also deposited by MOCVD on polycrystalline Hastelloy C276, a Ni-based multi-element alloy.…”
Section: -Ceo 2 (100)mentioning
confidence: 99%
“…[43] This is a stepped surface with two-dimensional symmetry where the spacing between the O ions in the short direction has a good lattice match to CeO 2 (110). CeO 2 (110) was also grown on Si(100) [138,[140][141][142] and on YSZ (110). [131] While there have been a number of reports of computational studies of adsorption and reaction on the CeO 2 (110) surface there have not yet been any experimental studies reported.…”
Section: -Ceo 2 (100)mentioning
confidence: 99%
“…Previously, a large body of work has been carried out on CeO 2 film deposited on Si substrate using various deposition techniques, such as spray pyrolysis, electron beam evaporation, reactive sputtering, ion-beam sputtering, metal-organic decomposition (MOD), pulsed laser deposition and others [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48]. Among these techniques, MOD method appears to be a convenient route due to its simplicity in processing control and accuracy in composition control [49] if compared to vacuum techniques, such as reactive sputtering and electron beam evaporation [34,37,40]. In MOD technique, a water-insensitive carboxylate or ␤-diketonate (acetylacetonate-type) compounds are used and there is no involvement of complex chemical reaction [50,51].…”
Section: Introductionmentioning
confidence: 99%