Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications

Cruz, Alexsandro Dos Santos Evangelista da; Santos, Marcos V. Puydinger dos; Campanelli, Raul Back; Pagliuso, P. G.; Bettini, Jefferson; Pirota, K. R.; Béron, Fanny

doi:10.1039/d0na00809e

Cited by 5 publications

(14 citation statements)

References 51 publications

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“…Interestingly, while the two largest nanowires present almost the same values of the phonons characteristic temperature ( R q ), a reduction of 37% was found for the smallest one. Such a reduction is discussed in terms of the increasing surface contribution of the nanowire with 180 nm in diameter and the Ga doping, which is consequential in the flux growth, as already considered in [2,17]. In summary, our work sheds light on the Mn 5 Si 3 growth mechanism via MFNN, and it goes a step further into the dimensionality effect on the nanowires' transport properties, which in turn contributes to the technological control for future applications.…”

Section: Introductionsupporting

confidence: 51%

“…Intermetallic Mn 5 Si 3 has attracted the attention of the scientific community due to their application in nanoelectronics regarding flexible and stretchable devices [1,2], and for presenting complex electronic transport phenomena, such as magnetoresistance [3], large anomalous hall effect [4], and a topological phase [5].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, core-shell nanowires, with a Mn 5 Si 3 core surrounded by Ga and Si oxides in the shell, have been published by our group [2]. Unlike the other reports [1,[12][13][14][15], we have used the metallic flux nanonucleation (MFNN) [16] method for growing single-crystal nanowires, using Ga as flux.…”

Section: Introductionmentioning

confidence: 99%

“…Unlike the other reports [1,[12][13][14][15], we have used the metallic flux nanonucleation (MFNN) [16] method for growing single-crystal nanowires, using Ga as flux. In addition to the nanostructure growth, the dimensionality effect of the magnons' contributions to the resistivity was already investigated in our previous work [2] by measuring nanowires with different diameters. We observed a reduction in the temperature range under T 2 dependence, suggesting a gradual suppression of the magnons' contributions as the nanowire diameter reduced.…”

Section: Introductionmentioning

confidence: 99%

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Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

et al. 2022

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Mn5Si3 nanowires are believed to be the building blocks of the newest trends of flexible and stretchable devices in nanoelectronics. In this sense, growing Mn5Si3 nanowires, as well as characterizing their electronic transport properties provide insight into their phenomenology. In this work, we report on the growth mechanism of Mn5Si3 nanowires produced by the metallic flux nanonucleation method, as well as the resistivity measurements of these nanostructures. Our calculation allows us, by using the Washburn equation for pore infiltration, to give a guess on why we obtain Mn-rich nanowires. In addition, some morphological aspects of the diameter-modulated Mn5Si3 nanowires were discussed based on the classical nucleation theory. From the resistivity measurements for the smallest diameter among the nanowires, we observed a significant reduction of around 37 % of the phonons characteristic temperature by fitting the Bloch-Grünesein formula with other sources of scattering. Our results lead to a better understanding on the recent metallic flux nanonucleation growth method, as well as going a step further into the electronic transport properties of the Mn5Si3 nanowires.

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Section: Introductionsupporting

confidence: 51%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

et al. 2022

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“…The ability to tune materials with local precision using defects or doping, designing interfaces as well as controllably encapsulating nanostructures, poses a challenge to theoreticians as well as experimentalists. The goals are to develop simple, efficient, yet high-quality, one-step nanofabrication processes [75]. Bottom-up syntheses are viable nano-processes for competitive large-scale production, enabling commercial use.…”

Section: Current and Future Challengesmentioning

confidence: 99%

The 2022 applied physics by pioneering women: a roadmap

Mayor

Alberi

Ayers³

et al. 2023

J. Phys. D: Appl. Phys.

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Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating an equitable environment in which women can thrive. This Roadmap on Women in Applied Physics, written by women scientists and engineers, is intended to celebrate women’s accomplishments, highlight established and early career researchers enlarging the boundaries in their respective fields, and promote increased visibility for the impact women have on applied physics research. Perspectives cover the topics of plasma materials processing and propulsion, super-resolution microscopy, bioelectronics, spintronics, superconducting quantum interference device technology, quantum materials, 2D materials, catalysis and surface science, fuel cells, batteries, photovoltaics, neuromorphic computing and devices, nanophotonics and nanophononics, and nanomagnetism. Our intent is to inspire more women to enter these fields and encourage an atmosphere of inclusion within the scientific community.

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Effect of impurities on charge and heat transport in tubular nanowires

et al. 2023

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We calculate the charge and heat currents carried by electrons, originatingfrom a temperature gradient and a chemical potential difference between the twoends of tubular nanowires with different geometries of the cross-sectional areas:circular, square, triangular, and hexagonal. We consider nanowires based on InAssemiconductor material, and use the Landauer-B ̈uttiker approach to calculate thetransport quantities. We include impurities in the form of delta scatterers and comparetheir effect for different geometries. The results depend on the quantum localizationof the electrons along the edges of the tubular prismatic shell. For example, the effectof impurities on the charge and heat transport is weaker in the triangular shell thanin the hexagonal shell, and the thermoelectric current in the triangular case is severaltimes larger than in the hexagonal case, for the same temperature gradient.

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Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications

Abstract: Recently, core-shell nanowires have been proposed as potential electrical connectors for nanoelectronics components. A promising candidate is Mn5Si3 nanowires encapsulated in an oxide shell, due to their low reactivity and...

Cited by 5 publications

References 51 publications

Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

Manganese silicide nanowires via metallic flux nanonucleation: growth mechanism and temperature-dependent resistivity

The 2022 applied physics by pioneering women: a roadmap

Effect of impurities on charge and heat transport in tubular nanowires

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