Abstract:Mn5Si3 nanowires are believed to be the building blocks of the newest trends of flexible and stretchable devices in nanoelectronics. In this sense, growing Mn5Si3 nanowires, as well as characterizing their electronic transport properties provide insight into their phenomenology. In this work, we report on the growth mechanism of Mn5Si3 nanowires produced by the metallic flux nanonucleation method, as well as the resistivity measurements of these nanostructures. Our calculation allows us, by using the Washburn … Show more
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