Low temperature electrical resistivity of polycrystalline La0.67Sr0.33MnO3 thin films

Narjis, A.; kaaouachi, A. El; Biskupski, G.; Daoudi, E.; Limouny, L.; Dlimi, S.; Errai, M.; Sybous, A.

doi:10.1016/j.mssp.2013.01.004

Cited by 13 publications

(3 citation statements)

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“…When the Re trivalent element is doped by various elements, a proportionate amount of Mn 3+ with the electronic configuration ( ) creating holes in the e g band [5]. On the other hand, in the metallic region, the transport mechanism is governed by the single magnon's scattering contribution, the electron-magnon scattering mechanism, electron-electron and electron-phonon scattering processes [11][12][13]. According to Hund's rule, this charge transfer induces a ferromagnetic coupling between Mn 3+ and Mn 4+ ions which in turn has a dramatic effect on the electrical conductivity [6,7].…”

Section: -Introductionmentioning

confidence: 99%

“…9,10 On the other hand, in the metallic region, the transport mechanism is governed by the single magnon's scattering contribution, the electron-magnon scattering mechanism, and electron-electron and electronphonon scattering processes. [11][12][13] In addition, a theoretical percolation model, proposed by Li et al, which is based on phase segregation between metallic and semiconductor regions, is used successfully in the entire temperature range. 14 In view of these facts, lot of efforts have been made to gain insights into the effect of Cr 3+ on the electrical properties of La 0.75 3+ Sr 0.25 2+ Mn 0.75−x 3+ Cr x Mn 0.25 4+ O 3 2− (0.15 ≤ x ≤ 0.25).…”

Section: Introductionmentioning

confidence: 99%

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Electrical transport and giant magnetoresistance in La_0.75Sr_0.25Mn_1−xCr_xO₃ (0.15, 0.20 and 0.25) manganite oxide

et al. 2015

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We have investigated the influence of chromium (Cr) doping on the magneto-electrical properties of polycrystalline samples La0.75Sr0.25Mn1-xCrxO3 (0.15 ≤ x ≤ 0.25), prepared by the sol-gel method. Comparison of experimental data with the theoretical models shows that in the metal-ferromagnetic region, the electrical behavior of the three samples is quite well described by a theory based on electron-electron, electron-phonon and electron-magnon scattering and Kondo-like spin dependent scattering. For the high temperature paramagnetic insulating regime, the adiabatic small polaron hopping (SPH) model is found to fit well the experimental curves.

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Section: -Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical transport and giant magnetoresistance in La_0.75Sr_0.25Mn_1−xCr_xO₃ (0.15, 0.20 and 0.25) manganite oxide

et al. 2015

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“…Here, we observe that the data are a close fit for E-S VRH (p = 1/2), Mott VRH (p = 1/3), and activated hopping (p = 1) at temperatures below a critical temperature (T c = 0.27 K); however, we were not able to determine the best exponent, due to the small range of conductivities under examination. To make an exact determination of the dominant transport-regime type in this investigation, we used the resistance-curve derivative-analysis method, (RCDA) [11,18,19] .…”

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confidence: 99%

A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

Dlimi¹,

kaaouachi²,

Limouny³

et al. 2021

J. Semicond.

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In this paper, we discuss low-temperature hopping-conductivity behavior in the insulating phase, in the absence of a magnetic field. We conduct a theoretical study of the crossover from hopping to activated transport in a GaAs two-dimensional hole system at low temperatures, finding that a crossover takes place from the Efros-Shklovskii variable-range hopping (VRH) regime to an activated regime in this system. This conductivity behavior in p-GaAs quantum wells is qualitatively consistent with the laws laid down in theories of localized electron interactions. Given sufficiently strong interactions, the holes in the localized states are able to hop collectively.

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Temperature-Electrical Resistivity Dependence of CdAs2 in View of Variable Range Hopping Models

Abdia

Oubraham²,

Abouharim

et al. 2020

Lecture Notes in Electrical Engineering

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Low temperature electrical resistivity of polycrystalline La0.67Sr0.33MnO3 thin films

Cited by 13 publications

References 43 publications

Electrical transport and giant magnetoresistance in La_0.75Sr_0.25Mn_1−xCr_xO₃ (0.15, 0.20 and 0.25) manganite oxide

Electrical transport and giant magnetoresistance in La_0.75Sr_0.25Mn_1−xCr_xO₃ (0.15, 0.20 and 0.25) manganite oxide

A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

Temperature-Electrical Resistivity Dependence of CdAs2 in View of Variable Range Hopping Models

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Low temperature electrical resistivity of polycrystalline La0.67Sr0.33MnO3 thin films

Cited by 13 publications

References 43 publications

Electrical transport and giant magnetoresistance in La0.75Sr0.25Mn1−xCrxO3 (0.15, 0.20 and 0.25) manganite oxide

Electrical transport and giant magnetoresistance in La0.75Sr0.25Mn1−xCrxO3 (0.15, 0.20 and 0.25) manganite oxide

A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

Temperature-Electrical Resistivity Dependence of CdAs2 in View of Variable Range Hopping Models

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Electrical transport and giant magnetoresistance in La_0.75Sr_0.25Mn_1−xCr_xO₃ (0.15, 0.20 and 0.25) manganite oxide

Electrical transport and giant magnetoresistance in La_0.75Sr_0.25Mn_1−xCr_xO₃ (0.15, 0.20 and 0.25) manganite oxide