Low temperature electrical conductivity and seebeck coefficient of nanostructured CuSe thin films with Ga addition

Abraham, Anitha; Tarachand,; Okram, G. S.; Jacob, Rajani; Sreenivasan, P. V.; Philip, Rachel Reena

doi:10.1016/j.vacuum.2016.04.011

Cited by 13 publications

(1 citation statement)

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“…The unique properties of the metal chalcogenide compounds have encouraged a lot of work on the synthesis and characterization of chalcogenide of different groups Among the metal chalcogenide that has received extensive attention is copper selenide (CuSe). CuSe has a wide range of stoichiometric compositions (CuSe, Cu 2 Se, Cu 3 Se 2 , Cu 7 Se 4 , Cu 5 Se 4 , Cu 2 Se) and non-stoichiometric compositions (Cu 2−x Se) [4][5][6][7]. Cu 2−x Se or Cu 2 Se belongs to the group of copper (I) selenide, while CuSe, Cu 3 Se 2 and CuSe 2 belong to the group of copper (II) selenide [8,9].…”

Section: Introductionmentioning

confidence: 99%

Structural and transport mechanism studies of copper selenide nanoparticles

Liew

Talib

Zainal

et al. 2019

Semicond. Sci. Technol.

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Copper selenide (CuSe) nanoparticles were successfully prepared via chemical precipitation method at room temperature. The field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and atomic force microsccopy (AFM) micrograph showed the synthesized CuSe powder is nanoparticles. The energy dispersive x-ray (EDX) analysis and inductively coupling plasma (ICP) analysis showed the formation of the stoichiometric CuSe compound. In-situ x-ray diffraction (XRD) at temperatures ranging from 100 to 473 K was performed to study the structure stability of the CuSe compound. The electrical conductivity, Hall mobility, carrier sheet density and thermal diffusivity of the CuSe compound have been investigated at various temperatures to study the electron-phonon transport mechanism in the compound.

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