LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O₃ THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP)₂, Zr(MMP)₄ AND Ti(MMP)₄

Growth of thin film ferroelectric PZT, PHT, and antiferroelectric PHO from atomic layer deposition precursors

“…In this study, we provide a suite of new Pb‐perovskite processes used to grow PZT, PHT, and PHO using alkyl‐amide ALD precursors for the 4+ cations (tetrakis dimethylamino titanium [TDMAT], zirconium [TDMAZ] and hafnium [TDMAH], respectively), and Pb(DMAMP) 2 for the lead cation. We implemented Pb(DMAMP) 2 as the lead precursor due to its suitably high vapor pressure, high thermal stability, and quality of ferroelectric and dielectric properties previously reported when Pb(DMAMP) 2 was used to grow PTO in conjunction with various Ti precursors including TDMAT 26–28 . TDMAZ and TDMAH were chosen as the Zr and Hf precursors, respectively, because their binary oxide ALD windows partially overlapped the same for both TDMAT and Pb(DMAMP) 2 29,30 …”

“…We implemented Pb(DMAMP) 2 as the lead precursor due to its suitably high vapor pressure, high thermal stability, and quality of ferroelectric and dielectric properties previously reported when Pb(DMAMP) 2 was used to grow PTO in conjunction with various Ti precursors including TDMAT. [26][27][28] TDMAZ and TDMAH were chosen as the Zr and Hf precursors, respectively, because their binary oxide ALD windows partially overlapped the same for both TDMAT and Pb(DMAMP) 2 . 29,30 Both PZT and PHT displayed phase purity and ferroelectric switching behavior with low leakage current density.…”

Deposition of SrZrO3 Thin Films Using Liquid Delivery Metal–Organic Chemical Vapor Deposition

“…Thus, only deposition of thick films with a thickness larger than several mm (or more) has been reported on porous substances. [7][8][9][10] In recent years, we have developed high-quality oxide thin films, namely, SrBi 2 TaO 9 (SBT) 11,12) and Pb(Zr,Ti)O 3 (PZT), 13) using liquid-delivery metal-organic chemical vapor deposition (LD-MOCVD); we considered that LD-MOCVD would enable resolution of the above difficulty because it involves layer-by-layer deposition. Additionally, LD-MOCVD is commonly used in semiconductor fabrication and is considered to be one of the most suitable methods for the mass-production of oxide thin films.…”

“…The LD-MOCVD apparatus is described in detail elsewhere. 13) The crystallinity of the deposited films was evaluated by the -2 method using X-ray diffraction (XRD). In general, the intensity of the diffraction of films with the same crystal structure and thickness reflects their crystallinity.…”

Fabrication of Ferroelectric Pb(Zr,Ti)O3 Thin Films by Spray Metalorganic Chemical Vapor Deposition

“…Liquid delivery metalorganic chemical vapor deposition (LD-MOCVD) has been researched and developed as a fabrication technique for ferroelectric thin films. [1][2][3][4][5][6][7][8][9][10][11] However, notwithstanding its capacity for high-quality thin film formation, the LD-MOCVD system is highly complex and requires continuous maintenance for stable operation. The most important subjects to be developed related to LD-MOCVD techniques are the vaporization system of liquid sources and the transport of vaporized source gases.…”