Low temperature deposition of indium tin oxide films by plasma ion-assisted evaporation

Füchsel, Kevin; Schulz, Ulrike; Kaiser, Norbert; Tünnermann, Andreas

doi:10.1364/ao.47.00c297

Cited by 17 publications

(11 citation statements)

References 14 publications

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“…It is almost comparable with the lowest resistivity of 1.07 10 cm ever reported for the ITO film after annealing in vacuum at 350 C for 1 hour [34]. As mentioned, one of the methods to further reduce the resistivity of AYZO films is attributed to the thermal activation of Al, Yb, and ionized oxygen vacancies [35], [36]. Therefore, the annealing process in oxygen-deficient environment significantly decreases the resistivity of AYZO films.…”

Section: Resultssupporting

confidence: 81%

Performance of Highly Transparent and Stable Zinc Oxide Co-Doped Thin-Film by Aluminum and Ytterbium

Cheng

Hsu

Lin

et al. 2014

J. Display Technol.

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The transparent and conductive zinc oxide co-doped by aluminum and ytterbium (AYZO) is demonstrated. The transmittance of AYZO films in visible region only changes by less than 1% due to the stability of the suppressed oxygen vacancies. With the illuminating wavelength red-shifting up to 532 nm, the 45 nm-thick AYZO film slightly enhances its transmittance to 90% with different annealing durations. The resistivity of AYZO films reaches a minimum of 3.2 10 cm at 450 C-annealing for 15 min because the annealing process enhances the activation of ionized Yb and Al donor states in AYZO films. With the residual oxygen vacancies rigorously controlled to minimize the transmittance variation during annealing, the Yb ions added into the AYZO films contribute to the conductivity after activation but help to stabilize. Nevertheless, the annealing process for 15 min or longer duration contributes to a decreased resistivity due to the reduction of oxygen vacancy by crystalline regrowth of the AYZO films. The resistivity of AYZO films is still dominated by the oxygen-vacancy instead of the ionized Al and Yb states even after activation. With the co-doping of Yb ions, the AYZO film effectively decreases its resistivity to be a competitive candidate to substitute the ITO for a highly transparent and conductive electrode.

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Section: Resultssupporting

confidence: 81%

Performance of Highly Transparent and Stable Zinc Oxide Co-Doped Thin-Film by Aluminum and Ytterbium

Cheng

Hsu

Lin

et al. 2014

J. Display Technol.

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“…46 Such plasma electrode devices, however, provide very little ability to cool the DKDP crystal, and could present difficulties in high average power applications. A potential alternative is the use of transparent, conductive thin film electrodes based on materials such as indium tin oxide (ITO), 47,48,49 which has been demonstrated with optical damage thresholds in the 3~11 J/cm 2 range. 47,48 It is challenging to achieve both high transparency (a prerequisite for high damage threshold) and low resistivity for ITO that is directly deposited on DKDP.…”

Section: Gain Isolationmentioning

confidence: 99%

Compact, Efficient, Low-cost Lasers (CELL) Project: Final Report

Deri¹,

Bayramian²,

Erlandson³

2012

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PROJECT MOTIVATION and SCOPEDevelopment of clean, sustainable and affordable energy sources is a national and international challenge. Inertial Fusion Energy (IFE) may provide a transformational solution that is scalable, proliferationresistant, and that generates negligible nuclear waste. To produce energy economically competitive with alternative power plants, the IFE laser drive must operate at a high repetition rate (>10 Hz) with high efficiency (>10%), while maintaining beam quality suitable for focusing to a small spot suitable for compressing the fusion target. The NIF laser system meets the beam quality requirements using a solidstate gain medium pumped by flashlamps. Scaling from NIF to IFE requires increases of ~10 5 in rep rate and ~20X in efficiency, which adds significant challenges to the laser design. The increased repetition rate results in much more waste heat generated in the system, and the prevention of thermal beam quality degradation (through phenomena such as thermally-induced birefringence) becomes a critical issue. While thermal issues are mitigated by increasing the system volume, a major size increase renders the system less economical and less easy to site. LIFE laser efficiency targets can be achieved at high rep rate without reliability degradation by using diode lasers as pumps. An IFE plant requires ~10 8 diode laser bars. At current costs the diodes dominate the overall laser cost and render IFE less cost-effective. Thus, designing a compact and cost-effective laser system with the repetition rate, efficiency, and beam quality required for IFE presents a significant technical challenge.The goal of the CELL strategic initiative was to develop new laser architectures to address these challenges by leveraging recent advances in optical technology. New laser design options have become potentially feasible due to improvements in laser gain media, diode pumps, large aperture nonlinear optics, and damage-resistant optics that have occurred since NIF's conception. The project investigated designs that take advantage of these advances, combining them with advanced and novel subsystem concepts to achieve laser designs with significantly improved performance, size, and cost. APPROACHA primary objective of this project was to rapidly evaluate a variety of beamline concepts and architectures, to ascertain their suitability for IFE applications. This is best done in simulation, due to the time and expense associated with prototyping such systems, even at significantly reduced scale. These evaluations were performed rapidly using a laser energetics code ("LPM") specifically developed for this project. This tool tracks all system inefficiencies from wallplug power to the final optic, includes the power consumed by cooling systems, and captures the behavior of different laser materials. In particular, it is suitable for simulating both four-level (e.g.; Nd-based) and three-level (e.g.; Yb-based) gain media. In order to achieve fast run-times, LPM abstracts away details of optical diffraction and ...

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“…The annealing refined result is comparable with the lowest resistivity of 1.07ϫ 10 −4 ⍀ cm ever reported 12 for ion-assisted e-beam evaporated ITO film after vacuum annealing at 350°C for 1 h. One of the methods to improve ITO conductivity is attributed to thermal activation of Sn and ionized oxygen vacancies. 13,14 Annealing with oxygen-deficient environment essentially improves ITO conductivity. A higher annealing temperature inevitably introduces faster indiffusion of residual oxygen into ITO without severe control on oxygen invasion.…”

Section: Nanograin Crystalline Transformation Enhanced Uv Transparencmentioning

confidence: 99%

Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film

Hsu

Pai

Meng

et al. 2009

Applied Physics Letters

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Low temperature deposition of indium tin oxide films by plasma ion-assisted evaporation

Cited by 17 publications

References 14 publications

Performance of Highly Transparent and Stable Zinc Oxide Co-Doped Thin-Film by Aluminum and Ytterbium

Performance of Highly Transparent and Stable Zinc Oxide Co-Doped Thin-Film by Aluminum and Ytterbium

Compact, Efficient, Low-cost Lasers (CELL) Project: Final Report

Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film

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