Low temperature deposition of a refractory aluminium compound by the thermal decomposition of aluminium dialkylamides

Takahashi, Yasutaka; Yamashita, Katsuji; Motojima, Seiji; Sugiyama, Kohzo

doi:10.1016/0039-6028(79)90400-x

Cited by 31 publications

(19 citation statements)

References 12 publications

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“…22 Previously, A1 2 (N(CH 3 ) 2 ) 6 was used by others as a single-source precursor to A1N, but the films were heavily contaminated with carbon. 23 APCVD M(NR 2 ) + excess NH 3 • metal nitride < 400 °C + nHNR 2 (R = CH 3 or C 2 H 5 ) …”

Section: Introductionmentioning

confidence: 99%

Chemical vapor deposition of aluminum nitride thin films

1992

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The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, A1 2 (N(CH 3 )2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100-500 °C with growth rates up to 1500 A/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15 ± 0.05 for films deposited at 100-200 °C and 1.05 ± 0.05 for those deposited at 300-500 °C. Films deposited at 100-200 °C had refractive indexes in the range 1.65-1.80 whereas indexes for films deposited at 300-400 °C were 1.86-2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 °C to 5.77 eV for those deposited at 500 °C. Films deposited at 100-200 °C were amorphous whereas those deposited at 300-500 °C were poly crystalline.

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Section: Introductionmentioning

confidence: 99%

Chemical vapor deposition of aluminum nitride thin films

1992

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“…NHs, by the folio.wing reaction (12) A1Br8 (g) + NHs(g) --> A1Br8 9 NH~(g) [1] From this adduct compound and according to the temperature (T1 < T2 < T3), the formation of aluminum amido bromide, A1Br2NH2, aluminum imido bromide, A1BrNH, and aluminum nitride, A1N, can occur by the following reactions T1 A1Br~ 9 NH3(g) > A1Br2NH2(s) + HBr(g) [2] T2 A1Br2NH2(s) . The formation of several compounds can be assumed to occur by reaction of aluminum tribromide and ammonia.…”

Section: Discussionmentioning

confidence: 99%

Composition, Kinetics, and Mechanism of Growth of Chemical Vapor‐Deposited Aluminum Nitride Films

Pauleau

Bouteville

Hantzpergue

et al. 1982

J. Electrochem. Soc.

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Aluminum nitride films have been deposited on silicon wafers and vitreous carbon substrates by reaction of aluminum tribromide and ammonia in a hydrogen flow system at a temperature in the range 400~176The films were analyzed by Rutherford backscattering spectroscopy. The composition, chemical stability, topography of surface, and deposition rate of films have been determined as a function of deposition temperature, total flow rate, and composition of reactant mixture. The effect of homogeneous reactions on the deposition process has been discussed. A growth mechanism of aluminum nitride films based on a competition between the homogeneous formation of powdery aluminum nitride and the formation of films by surface reactions is proposed. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2014-12-13 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2014-12-13 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2014-12-13 to IP

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“…The triethylgallium monamine was found to decompose to form an amide which further decomposed to form a material with a marked decreased in volatility (37). The use of the amides [HAL(NR 2 ) 3 ] 2 and [HAL(NR 2 ) 2 ] 2 {R = CH 3 , C 2 H 5 }resulted in both significant C incorporation into the films and nonstoichiometry in terms of higher metal concentrations (38). Deposition studies with the dialkylaluminum azides (39) and diethylgallium azide (40) resulted in essentially stoichiometric, amorphous or highly oriented poly crystalline A1N and GaN films, but with C incorporation to «10%.…”

Section: Movpe Growth Of Iii-n Materials-brief Review Of Precursorsmentioning

confidence: 97%

Chemical Considerations Regarding the Vapor-Phase Epitaxy of Binary and Ternary III-Nitride Thin Films

Davis¹,

Bremser²,

Nam³

et al. 1997

Synthesis and Characterization of Advanced Materials

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Monocrystalline GaN(0001) films were grown via OMVPE at 950°C on AlN(0001) deposited at 1100°C on α(6H)-SiC(0001) Si substrates. Al x Ga 1-x N films (0≤x≤1) were deposited at 1100°C directly on SiC. X-ray rocking curves for 1.4 μm GaN(0004) revealed FWHM values of 58 and 151 arcsec for materials simultaneously grown on the on-axis and off-axis SiC, respectively. Silicon donor-doping in highly resistive GaN and Al x Ga 1-x N (for x≤0.4) was achieved for net carrier concentrations ranging from approximately 2×10 17 cm -3 to 2×10 19 (Al x Ga 1-x N) or to 1×10 20 (GaN) cm -3 . Mg-doped, p-type GaN was achieved with n A -n D = 3×10 17 cm -3 , ρ = 7 Ω·cm and μ = 3 cm 2 /V·s.The numerous potential and recently realized commençai applications of the III-N materials has prompted considerable research regarding their growth, characterization and device development. Gallium nitride (wurtzite structure), the most studied of these materials, has a room temperature band gap of 3.39 eV and forms continuous solid solutions with both A1N (6.28 eV) and InN (1.95 eV). As such, materials with engineered direct band gaps are feasible for optoelectronic devices tunable in wavelength from the visible (600 nm) to the deep UV (200 nm). The relatively strong atomic bonding and wide band gaps of these materials also points to their potential use in highpower and high-temperature microelectronic devices. Selected thin film alloys with engineered bandgaps and p-n junction, double heterostructure and quantum well blue and green light emitting diode (LED) structures (7-7) and blue laser diodes (8) containing these compounds and alloys have been produced and either are or soon will be commercially available. High electron mobility transistors (9), heterostructure fieldeffect transistors (10), metal-semiconductor-field-effect transistors (10-13) and surface acoustic devices (14) have also been reported. Concomitant with the realization and/or optimization of these devices is the need for improved film quality. Bulk single crystal wafers of A1N and GaN are not commercially available (75); therefore, heteroepitaxial films must be grown. The principal method of deposition of these films is organometallic vapor phase epitaxy (OMVPE); however, gas source molecular beam epitaxy (GSMBE) is being increasingly employed. Sapphire(OOOl) is the most commonly used substrate, although its a-axis lattice parameter and coefficients of thermal expansion are significantly different from that of any of the nitrides. It was first observed by Yoshida et al. (16,17). that the electrical and luminescence properties of GaN films grown via reactive MBE improved markedly when an A1N "buffer layer" 12

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Low temperature deposition of a refractory aluminium compound by the thermal decomposition of aluminium dialkylamides

Cited by 31 publications

References 12 publications

Chemical vapor deposition of aluminum nitride thin films

Chemical vapor deposition of aluminum nitride thin films

Composition, Kinetics, and Mechanism of Growth of Chemical Vapor‐Deposited Aluminum Nitride Films

Chemical Considerations Regarding the Vapor-Phase Epitaxy of Binary and Ternary III-Nitride Thin Films

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