Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

Kamiyama, Satoshi; Iwaya, Motoaki; Hayashi, Nobuaki; Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu; Watanabe, Satoshi; Kaneko, Y.; Yamada, Noriko

doi:10.1016/s0022-0248(00)01017-4

Cited by 87 publications

(53 citation statements)

References 8 publications

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“…Above all, it is most important to reduce the dislocation which acts leakage current path for electrical driven UV-LD. The dislocation density of ~7.6 × 10 8 /cm 2 in this work is still greater than in other research results [5,21].…”

Section: Resultscontrasting

confidence: 69%

“…Amano and Akasaki's research group in Meijo University reported the dislocation density and strain could be released by growing AlGaN on periodically grooved GaN template. The crack-free AlGaN with low threading dislocation density was grown on grooved GaN by combining the LT-AlN interlayer and hetero-epitaxial lateral overgrowth (hetero-ELO) [4][5][6]. They succeeded in an electrically pulsed operation of UV-LD at 350.9 nm, for the first time, using a GaN/AlGaN MQW active layer grown on the thick and crack-free AlGaN with a low threading dislocation density.…”

Section: Introductionmentioning

confidence: 99%

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Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Kim

Bae

et al. 2017

Appl. Sci. Converg. Technol.

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The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of 950 o C and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crackfree and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the 4 μm -thick Al 0.2 Ga 0.8 N was crack-free over entire 2-inch wafer. The dislocation density of Al 0.2 Ga 0.8 N was as low as ~7.6 × 10 8 /cm 2 measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/ AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with 5 μm-wide and 700 μm-long cavity for electrical properties. The turn on voltage was below 5 V and the resistance was55 Ω at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

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Section: Resultscontrasting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Kim

Bae

et al. 2017

Appl. Sci. Converg. Technol.

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“…), the deviation of the theoretical values from the experimental results is relatively large. The reasons resulting in this feature can be ascribed to the crystalline quality of the Al x Ga 1-x N films, the inhomogeneous distribution of constituent atoms and other factors [25,33,34]. Comparing the present results with the theoretical results based on the semi-infinite crystal model (refer to Fig.…”

Section: Numerical Results and Discussionsupporting

confidence: 59%

Surface phonon polariton modes of wurtzite structure Al_x Ga_1–xN thin film

Zhang

Shi

2008

Physica Status Solidi (b)

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The polar phonon polariton modes in a wurtzite thin film structure are theoretically investigated in the present paper. It is confirmed that there are two types of phonon polariton modes, i.e. the surface phonon polariton (SPP) modes and the confined phonon polariton (CPP) modes in wurtzite thin film systems. The frequency ranges of the SPP and CPP modes are discussed in detail. The dispersive equation of the SPP modes is also deduced. Numerical calculations on Alx Ga1–x N thin film structures reveal that, for a given free wave number kt in the x ‐direction, there are two branches of SPP modes in general. The Al concentration x of Alx Ga1–x N materials and the thickness d of the wurtzite thin film have an important influence on the dispersive properties of the polariton modes, especially as the thickness d is small. Our calculated results are completely consistent with the recent experimental observation in Alx Ga1–x N thin film systems. We confirm that the SPP modes observed are the low‐frequency branches of SPP modes. Furthermore, the frequency values of the high‐frequency branches of SPP modes are explicitly given, and a possible method for observing these high‐frequency SPP modes is also brought forward. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…10 Several groups reported on different approaches to grow thick AlGaN layers over GaN buffers. 11,12 However, the use of GaN layers drastically decreases the light extraction efficiency in deep-UV emitters due to strong absorption. We now report an approach of using a set of AlN/AlGaN superlattices ͑SLs͒ to reduce the biaxial tensile strain and successfully grow 3.0-m-thick Al 0.2 Ga 0.8 N on sapphire without any cracks.…”

mentioning

confidence: 99%

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Zhang

Wang

Gaevski

et al. 2002

Applied Physics Letters

195

105

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We report on an AlN/AlGaN superlattice approach to grow high-Al-content thick n+-AlGaN layers over c-plane sapphire substrates. Insertion of a set of AlN/AlGaN superlattices is shown to significantly reduce the biaxial tensile strain, thereby resulting in 3-μm-thick, crack-free Al0.2Ga0.8N layers. These high-quality, low-sheet-resistive layers are of key importance to avoid current crowding in quaternary AlInGaN multiple-quantum-well deep-ultraviolet light-emitting diodes over sapphire substrates.

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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

Cited by 87 publications

References 8 publications

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Surface phonon polariton modes of wurtzite structure Al_x Ga_1–xN thin film

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

Cited by 87 publications

References 8 publications

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Surface phonon polariton modes of wurtzite structure Alx Ga1–xN thin film

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

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Surface phonon polariton modes of wurtzite structure Al_x Ga_1–xN thin film