Abstract:Our aim was to assess the feasibility of the Low Temperature Cyclic Deposition / Etch (CDE) of tensile-Si:P for use in Raised Sources and Drains of n-type Field Effect Transistors. We were targeting high amounts of tensile strain and low resistivities in tensile Si:P layers grown at 550°C, with (i) mainstream Si2H6 + PH3 gases for the non-selective deposition of t-Si:P and (ii) HCl + GeH4 for the selective etches of poly-Si:P versus monocrystalline Si:P (to have selectivity on patterned wafers). Thanks to the … Show more
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