Low-Temperature Crystallization of Poly-SiGe Thin-Films by Solid Phase Crystallization

Nakahata, Kouichi; Isomura, Masao; Wakisaka, Kenichiro

doi:10.4028/www.scientific.net/ssp.93.231

Cited by 14 publications

(8 citation statements)

References 2 publications

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“…The crystallization temperature of the amorphous Si 1-x Ge x can be reduced if the crystalline Ge adjoins it. 30) It is desirable for the case of Sn containing group-IV alloys, because low temperature annealing for long time is preferred to avoid the Sn precipitation. 31) However, as shown in Fig.…”

Section: -Step Si 1-x-y Gementioning

confidence: 99%

“…The Si-rich Si 1-x Ge x needs a higher temperature for the crystallization than the Ge-rich Si 1-x Ge x . 30) Therefore, prior crystallization of Si independent from Ge was found to be essential to the formation of the Si-rich Si 1-x-y Ge x Sn y polycrystal using the Sn-ND virtual substrate. Therefore, the growth process for the Si-rich poly-Si 1-x-y Ge x Sn y was divided into 2 steps.…”

Section: -Step Si 1-x-y Ge X Sn Y Formationmentioning

confidence: 99%

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SiSn mediated formation of polycrystalline SiGeSn

Shimura

Okado

Motofuji

et al. 2022

Jpn. J. Appl. Phys.

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Si1-xSnx and Si1-x-yGexSny polycrystalline thin layers were grown using Sn nanodots as crystal nuclei. Si1-xSnx crystallization occurred around Sn nanodots, and the substitutional Sn content was estimated as high as 1.5%. In the case of the poly-Si1-x-yGexSny, Ge and Si were deposited simultaneously on the Sn nanodots, however, Ge was preferentially incorporated into the Sn nanodots, resulting in the formation of the poly-Si1-x-yGexSny with amorphous Si residue. It was found that the poly-Si1-xSnx formed by the Sn nanodots mediated formation can be used as the new virtual substrate to be alloyed with Ge, namely the 2step formation process consisting of poly-Si1-xSnx crystallization and Ge alloying with the Si1-xSnx is the effective formation process for the poly-Si1-x-yGexSny formation. This non-equilibrium process with achieving crystallization resulted in the substitutional Si and Sn content in the as-grown poly-Si1-x-yGexSny as high as 19.4% and 3.4%, respectively.

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Section: -Step Si 1-x-y Gementioning

confidence: 99%

Section: -Step Si 1-x-y Ge X Sn Y Formationmentioning

confidence: 99%

SiSn mediated formation of polycrystalline SiGeSn

Shimura

Okado

Motofuji

et al. 2022

Jpn. J. Appl. Phys.

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“…For the top cell, it can be done by raising the thickness of the intrinsic a-Si:H layer to 2 50nm or by increasing the short wavelength QE. However, for the middle and bottom cells, more efforts are needed such as light trapping, improved property of nc-Si:H and development of new intrinsic layer such as nc-SiGe:H [50][51][52] as well as improvement in the TRJ. The AZO inter-layer was inserted between the top and bottom cells to make the junction like a TRJ.…”

Section: Analysis Of Solar Cellsmentioning

confidence: 99%

Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films

Iftiquar¹,

Lee²,

Lee³

et al. 2012

Photodiodes - From Fundamentals to Applications

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“…We pay attention to silicongermanium (SiGe) films as relatively low cost and environmentally friendly materials. [5][6][7][8][9][10][11][12][13][14] However, conventional thinfilm SiGe materials such as amorphous SiGe (a-SiGe) and microcrystalline SiGe (µc-SiGe) do not have sufficient sensitivity for wavelengths larger than 900 nm, because their carrier properties cannot be maintained at Ge contents higher than 30%. In the a-SiGe and µc-SiGe, the hydrogen termination of dangling bonds is essential to provide sufficient photovoltaic characteristics.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of silicon–germanium by aluminum-induced layer exchange

Isomura

Yajima

Nakamura

2018

Jpn. J. Appl. Phys.

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We have studied the crystallization of amorphous silicon-germanium (a-SiGe) by aluminum (Al)-induced layer exchange (ALILE) with a starting structure of glass/Al/Al oxide/a-SiGe. We examined ALILE at 450 °C, which is slightly higher than the eutectic temperature of Ge and Al, in order to shorten the ALILE time. We successfully produced c-SiGe films oriented in the (111) direction for 16 h without significant alloying. The thickness of Al layers should be 2800 Å or more to complete the ALILE for the a-SiGe layers of 2000-2800 Å thickness. When the Al layer is as thick as the a-SiGe layer, almost uniform c-SiGe is formed on the glass substrate. On the other hand, the islands of c-SiGe are formed on the glass substrate when the Al layer is thicker than the a-SiGe layer. The islands become smaller with thicker Al layers because more excess Al remains between the SiGe islands. The results indicate that the configuration of c-SiGe can be altered from a uniform structure to island structures of various sizes by changing the ratio of a-SiGe thickness to Al thickness.

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Low-Temperature Crystallization of Poly-SiGe Thin-Films by Solid Phase Crystallization

Cited by 14 publications

References 2 publications

SiSn mediated formation of polycrystalline SiGeSn

SiSn mediated formation of polycrystalline SiGeSn

Single- and Multiple-Junction p-i-n Type Amorphous Silicon Solar Cells with p-a-Si1-xCx:H and nc-Si:H Films

Crystallization of silicon–germanium by aluminum-induced layer exchange

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