Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Heya, Akira; Kanda, Kazuhiro; Toko, Kaoru; Sadoh, Taizoh; Amano, Sho; Matsuo, Naoto; Miyamoto, Shuji; Miyao, Masanobu; Mochizuki, Takayasu

doi:10.1016/j.tsf.2013.02.129

Cited by 19 publications

(24 citation statements)

References 32 publications

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“…The difference in the activation energy between the furnace annealing and the soft X-ray irradiation, namely, 0.12 eV, may be related to the effect of soft X-ray irradiation. We have reported that a crystal-like region, called the quasi-nucleus, is formed by electron excitation and atomic movement with soft X-ray irradiation of amorphous Si [13]- [16]. It seems that the metastable state (crystal-like region) in the damage region introduced by B ion implantation was achieved by soft Xray irradiation.…”

Section: Discussionmentioning

confidence: 99%

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Heya

Matsuo

Kanda

2016

IEICE Trans. Electron.

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A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400 • C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10 −3 at 110 • C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.

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Section: Discussionmentioning

confidence: 99%

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Heya

Matsuo

Kanda

2016

IEICE Trans. Electron.

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“…B ions were implanted to Si (100) wafer (n-type, 8-12 Ωcm) with an energy of 5 keV and a dose quantity of 2×10 15 cm -2 . The irradiation of soft X-ray was carried out at BL07A of NewSUBARU [1]. The photon energy was changed from 50 to 250 eV, with the dose quantity of 50 mA h. In addition, to reduce the sample temperature, the storage-ring current decreased from 250 to 50 mA.…”

Section: Exprimentalmentioning

confidence: 99%

“…Fabrication method of an ultra-shallow junction lower than 10nm is required. We proposed a novel activation method of B dopant at low temperature by using a soft X-ray undulator [1]. The photon energy dependence of sheet resistance and the B depth profile were investigated.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Low-Temperature Activation of B in Si by Soft X-ray Irradiation

Heya¹,

Fukuoka²,

Matsuo³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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Mechanism of novel activation method of B dopant using a soft X-ray undulator was investigated. The activation energy of B activation by soft X-ray irradiation was lower than that of B activation by an annealing. As the irradiated photon energy closed with the core level of Si2p, the activation ratio increased. This related to the enhancement of electron excitation as a base on Felmi golden rule. At low temperature, the B activation occurred by the atomic migration of Si atoms due to Coulomb force via the electron excitation.

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“…5) In this method, the threshold temperatures for crystallization of Si, Ge, and SiGe films are reduced to about 100 ℃ by the enhancement effect of atomic movement via electron excitation. [6][7][8] Furthermore, a low-temperature treatment using atomic hydrogen, named atomic hydrogen annealing (AHA), have been developed. 9) For the AHA treatment, hydrogen molecules are decomposed by catalytic cracking reactions on a heated catalyst placed near the substrate.…”

Section: Introductionmentioning

confidence: 99%

Improvement of poly-Ge TFT characteristics by atomic hydrogen annealing

Heya

Hirano

Matsuo

2015

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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Ge thin film is expected as an active layer in a thin-film transistor (TFT) because the electron mobility of Ge is larger than that of Si. In this study, the crystallization of Ge thin film by soft X-ray irradiation and the improvement of interface property of poly-Ge/SiO 2 in poly-Ge TFT by atomic hydrogen annealing (AHA) are investigated for realization of high-performance poly-Ge TFT. The drain current (I d ) did not depend on the gate voltage (V g ) before AHA treatment. However, as the AHA treatment time increased, the I d decreased and the I d came to depend on V g . The on/off ratio of 10 was obtained by AHA for 360 min. It is found that the defect density in poly-Ge film and at poly-Ge/SiO 2 interface can be reduced by AHA slightly.

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Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Cited by 19 publications

References 32 publications

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Mechanism of Low-Temperature Activation of B in Si by Soft X-ray Irradiation

Improvement of poly-Ge TFT characteristics by atomic hydrogen annealing

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