Low-temperature conductivity of silicon doped with antimony

Abstract

A detailed analysis of the experimental temperature dependences of the resistivity of silicon doped with arsenic with a concentration of 10 18 cm -3 is performed for the region 1.8 K < T < 25 K. It is shown that, as a result of cooling to a temperature lower than 4.5 K, a transition from the Mott mode with variable hop ping length to the mode of hopping conduction via nearest neighbors is observed, while, at T < 2.5 K, a tran sition to the Shklovskii-Efros mechanism is possible. A model for such a temperature crossover is suggested; the model is based on simplified solution of the percolation problem with the use of an interpolation expres sion for the density of states. Performed estimates show that the model is in satisfactory agreement with exper imental data when the minimum number of adjustable parameters are used.

Low Temperature Conductivity inn-Type Noncompensated Silicon below Insulator-Metal Transition

“…Substituting (10) into (9) and using the previously obtained values, 2 and = 4 , we calculated the dependencies ( ) for the fixed values of the exponent in (10), which were compared with the experimental data ln[ ( )/ 0 ]. We obtained that theoretical results coincide with the experimental data only varying values of the exponent with temperature [60]. For example, in the interval 5-25 K the agreement is observed only for = 0 (the Motttype VRH), while for 2-5 K to obtain the agreement between theory and experiment much greater value of , > 6, is required, Figure 8.…”

Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition

“…This low-T range of carrier transport is characterized by the charge instability and the negative differential resistance (NDR) region with increasing current density [27,28]. Since the critical concentration for IMT in antimony-doped silicon is (3 ± 0.2) × 10 18 cm −3 [29] and slightly increases only below 1 K [30,31], it can be argued that the effects identified in [25][26][27][28] in Si:Sb precede the appearance of the IMT. Thus, further investigation of these properties is relevant for a more complete understanding of the carrier transport mechanisms manifested near the IMT in different temperature ranges.…”

“…Recently, the peculiarities of conductivity in non-compensated silicon doped with Sb (10 18 cm −3 ) have been investigated [25][26][27][28]. It was found that in the temperature (T) range of 28-90 K an activation mechanism with an energy of 1.73 meV occurs due to motion of electrons along the almost delocalized states.…”