Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Gomeniuk, Y. V.; Nazarov, A. M.; Vovk, Ya. N.; Lu, Yi; Buiu, O.; Hall, Steve; Efavi, Johnson Kwame

doi:10.1016/j.mssp.2006.10.014

Cited by 12 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In several cases, a ''hump'' in the C-V curves in the depletion region was observed, arising from the influence of interface traps. [30][31][32] The dissipation factor (Fig. 6), which is related to the conductance of the capacitor stack and which was moderately low in the accumulation region-below 0.1 at 100 and 500 kHz measurement frequency-demonstrated well-defined maxima close to the flat-band voltage.…”

Section: Resultsmentioning

confidence: 99%

Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films

et al. 2008

View full text Add to dashboard Cite

ZrO 2 thin films were grown onto silicon (100) substrates by atomic layer deposition (ALD) using novel cyclopentadienyl-type precursors, namely (CpMe) 2 ZrMe 2 and (CpMe) 2 Zr(OMe)Me (Cp ¼ cyclopentadienyl, C 5 H 5 ) together with ozone as the oxygen source. Growth characteristics were studied in the temperature range of 250 to 500 C. An ALD-type self-limiting growth mode was verified for both processes at 350 C where highly conformal films were deposited onto high aspect ratio trenches. Signs of thermal decomposition were not observed at or below 400 C, a temperature considerably exceeding the thermal decomposition temperature of the Zr-alkylamides. Processing parameters were optimised at 350 C, where deposition rates of 0.55 and 0.65 A ˚cycle À1 were obtained for (CpMe) 2 ZrMe 2 /O 3 and (CpMe) 2 Zr(OMe)Me/O 3 , respectively. The films grown from both precursors were stoichiometric and polycrystalline with an increasing contribution from the metastable cubic phase with decreasing film thickness. In the films grown from (CpMe) 2 ZrMe 2 , the breakdown field did not essentially depend on the film thickness, whereas in the films grown from (CpMe) 2 Zr(OMe)Me the structural homogeneity and breakdown field increased with decreasing film thickness. The films exhibited good capacitive properties that were characteristic of insulating oxides and did not essentially depend on the precursor chemistry.

show abstract

Section: Resultsmentioning

confidence: 99%

Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films

et al. 2008

View full text Add to dashboard Cite

show abstract

“…In the case of dielectric layers with leakage currents, the results of both C-V and ω G- measurements require correction, as described in [16]. Before the conductance related to interface traps is plotted in G/ω vs. frequency coordinates, the dc conductance (or the conductance at the minimum frequency) should be subtracted from the measured value in order to get rid of the current component due to leakage through the dielectric layer.…”

Section: Measurement Techniquesmentioning

confidence: 99%

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Gomeniuk¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. Capacitance-voltage ( C-V ) and conductance-frequency () techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high for Al-HfO 2 -Si, Pt-Gd 2 O 3 -Si and Pt-LaLuO 3 -Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor.

show abstract

“…This may lead to ambiguity in determination of parameters of the interface states, or even to mistaken assignment of the oxide bulk effects to the interface-related processes. In the case of dielectric layers with leakage currents, the results of both C-V and G-ω measurements require correction, as described in [18]. Before the conductance related to interface traps is plotted in G/ω vs. frequency coordinates, the dc conductance (or the conductance at the minimum frequency) should be subtracted from the measured value in order to get rid of the current component due to leakage through the dielectric layer.…”

Section: Resultsmentioning

confidence: 99%

Interface and Bulk Properties of High-<i>K</i> Gadolinium and Neodymium Oxides on Silicon

Gomeniuk

Nazarov

et al. 2011

AMR

Self Cite

View full text Add to dashboard Cite

The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2O3/Si and Nd2O3/Si interfaces were determined. The density and energy location of the bulk localized states in the band gap of the Gd2O3 and Nd2O3 dielectrics were estimated and a plausible nature of the observed defects was suggested.

show abstract

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Cited by 12 publications

References 8 publications

Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films

Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO2 thin films

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Interface and Bulk Properties of High-<i>K</i> Gadolinium and Neodymium Oxides on Silicon

Contact Info

Product

Resources

About