2015
DOI: 10.1149/2.0421602jes
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Low-Temperature Characteristics and Film-Forming Mechanism of Elemental Sulfur Additive on Graphite Negative Electrode

Abstract: We report here that the low-temperature performance of graphite electrode is improved by adding a small amount of elemental sulfur (S 8 ) into the graphite negative electrode. The reversible capacity at −30 • C is much larger for the sulfur-added graphite electrode. The origin of this beneficial feature is examined through impedance analysis, which illustrates that the charge transfer resistance is much smaller in the sulfur-added graphite electrode at low temperatures. In the first lithiation step, the eleme… Show more

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Cited by 20 publications
(19 citation statements)
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“…23,26,27 In addition, sulfur derived SEI and chlorine atom containing additive are reported to improve low temperature performance of graphite electrode. 13,14,27 Based on the considerations and requirements of PC-based electrolyte, 4chloromethyl-1,3,2-dioxathiolane 2-oxide (CMDO), a sulfur-containing compound with similar structure to sultones, seems to be a reasonable additive and the material has not been used and studied for this purpose. CMDO has sulfite functional group and chlorine substituent on the structure and is designated to utilize the advantages of sulfite functional group and chlorine atom.…”
Section: Introductionmentioning
confidence: 99%
“…23,26,27 In addition, sulfur derived SEI and chlorine atom containing additive are reported to improve low temperature performance of graphite electrode. 13,14,27 Based on the considerations and requirements of PC-based electrolyte, 4chloromethyl-1,3,2-dioxathiolane 2-oxide (CMDO), a sulfur-containing compound with similar structure to sultones, seems to be a reasonable additive and the material has not been used and studied for this purpose. CMDO has sulfite functional group and chlorine substituent on the structure and is designated to utilize the advantages of sulfite functional group and chlorine atom.…”
Section: Introductionmentioning
confidence: 99%
“…6, the continuous electron reduction of the secondary radical with the addition of Li + brings about the formation of an inorganic compound LiCl in 26 and 27 with a respective DG of À147.4 and À136.8 kcal mol À1 (relative to 23 and Li + with SMD-B3PW91/6-311++G(d,p)). Complex 27, consisting of free LiCl and PC-solvated LiSO 3 CH 2 CH]CH 2 , is less stable by approximately 10 kcal mol À1 than 26, in which LiCl is still coordinated to LiSO 3 R. The further electron reduction of the primary radical 25 results in a diradical intermediate (28) that has only a rather small barrier ($1 kcal mol À1 ) through a transition state (29) to produce inorganic compound Li 2 SO 3 by 16308 | RSC Adv., 2020, 10, 9 . As shown in Fig.…”
Section: The Electroreductive Decompositions Of Cmdo In (Cmdo)li + (Pmentioning
confidence: 99%
“…16 It has been shown that the resistance of the sulfur-derived SEI layer is small. [27][28][29][30] In addition, sulfur-and chlorine-containing additives have been able to improve the performance of the LIB at low temperatures. 27,28 Although there are many theoretical and experimental efforts in this regard, the SEI is still considered the least understood component in LIBs, yet it presents the most critical problems.…”
Section: Introductionmentioning
confidence: 99%
“…Third, Li 2 S being generated in the first lithiation disappears upon the forthcoming delithiation, revealing that Li 2 S is electrochemically oxidized in the de-lithiation step. 16 The appearance of sulfur compounds (sulfides or disulfides) without etching in the first de-lithiated sample (iii) manifests itself that the film components populated on the topmost layer are dissolved in the 1 st de-lithiation period, therefore S 2p photoelectrons can be emitted without etching. Note that the similar film dissolution upon de-lithiation has been reported elsewhere.…”
Section: Fig 1 Compares the Lithiation/de-lithiation Behaviors For Twomentioning
confidence: 99%
“…[12][13][14] At this point, film-forming additives can be used to modify the chemical and physical properties of SEI, leading to better performances of graphite electrodes at low-temperature. 15 Our approach to improve the low-temperature performance involves the addition of sulfur-containing additives, such as elemental sulfur, 16 as a film-forming agent. We have demonstrated that adding a small amount of elemental sulfur (S 8 ) into the graphite electrode enhances low-temperature performances by virtue of the sulfur-containing surface film.…”
mentioning
confidence: 99%