Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications

Biercuk, Michael J.; Monsma, D. J.; Marcus, C. M.; Becker, Jill; Gordon, Roy G.

doi:10.1063/1.1612904

Cited by 181 publications

(154 citation statements)

References 23 publications

Supporting

Mentioning

144

Contrasting

Unclassified

Order By: Relevance

“…In Fig.1, we first show the electrical properties of a back-gated (t SiO2 =10nm, Fig. 1a) semiconducting SWNT (d~1.4 to 1.5 nm, channel length L~150 nm between Pd source/drain S/D) device before and after K-doping (details of doping described previously [16][17][18] 10,14,15 The nanotube segments outside the gate stack are fully exposed for K vapor doping to form n + regions (Fig.2a). ALD of HfO 2 on SWNTs provides excellent electrostatic modulation of the channel conductance without degrading the transport property of the 1D nanotube channels.…”

mentioning

confidence: 99%

See 1 more Smart Citation

High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts

et al. 2005

View full text Add to dashboard Cite

SWNT synthesis, 13 atomic layer deposition (ALD) of HfO 2 10,14,15 (t ox =8nm) and details of device fabrication are similar to those described previously. In Fig.1, we first show the electrical properties of a back-gated (t SiO2 =10nm, Fig. 1a) semiconducting SWNT (d~1.4 to 1.5 nm, channel length L~150 nm between Pd source/drain S/D) device before and after K-doping (details of doping described previously [16][17][18] ). The as-made device is a p-type FET with I on~ 5µA and linear conductance of G on~0 .3 e 2 /h (Fig. 1b). technique. 10,14,15 The nanotube segments outside the gate stack are fully exposed for K vapor doping to form n + regions (Fig.2a). ALD of HfO 2 on SWNTs provides excellent electrostatic modulation of the channel conductance without degrading the transport property of the 1D nanotube channels. 3,9,10 This is another key element in affording high performance n-type SWNT FETs.Prior to K doping, the devices operated as p-MOSFETs (Fig. 2b blue curve) when the two ends of the tube were electrostatically hole-doped by a back-gate. 21 Upon exposure to K vapor in vacuum, the S/D regions became n-doped while the top-gated channel regions remained intrinsic due to blocking of K by the gate stack. This afforded n + -i-n + n-type nanotube MOSFETs. The electrical properties of a SWNT (d~1.6-1.7 nm; E g ~0.55eV) MOSFET before (p-type) and after K-doping (n-type) in vacuum are shown showed near-symmetrical characteristics with similar on-currents I on~ 8 µA at V ds =0.5 (Fig. 2c). The transconductance were (dI ds /dV gs ) max ~ 20 µS and ~10 µS for n-and pFETs respectively. Both devices exhibited excellent switching characteristics with subthreshold swings S=dI ds /dV gs~7 0-80 mV/decade (Fig. 2b), near the theoretical limit of S~60 mV/decade. Note that at V ds =0.5V, a high I on /I off ~10 6 was achieved for the nanotube n-MOSFET with no significant ambipolar p-channel conduction (Fig. 2b red curve). These characteristics are the best reported to-date for n-type nanotube FETs enabled by the MOSFET geometry 6,22 with chemically doped S/D, high-κ dielectrics and transparent metal-tube contacts. In such a MOSFET-like geometry the gate electric fields result in bulk switching of the nanotube directly under the gate-stack with little effect to the Schottky barriers at the metal-tube junctions.We next investigated the effects of the contacts doping level on the electrical characteristics of our nanotube n-FETs. The doping level was varied by adjusting the exposure time of the devices to K atoms. Fig. 3a (dashed curve) shows the switching properties for the same device in Fig.2 but at a higher degree of n-doping of the S/D contacts. The on-current of the device increased from ~ 8µA to 15 µA at V ds =0.5 V (Fig. 3b), attributed to further enhanced transparency at the Pd-tube junctions and lower series resistance in the n + nanotube segments. The on-current increase was, however, accompanied by a more obvious ambipolar p-channel conduction, an increase in the minimum leakage current (I min ) and a reduction of I ...

show abstract

mentioning

confidence: 99%

“…technique. 10,14,15 The nanotube segments outside the gate stack are fully exposed for K vapor doping to form n + regions (Fig.2a). ALD of HfO 2 on SWNTs provides excellent electrostatic modulation of the channel conductance without degrading the transport property of the 1D nanotube channels.…”

mentioning

confidence: 99%

High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts

et al. 2005

View full text Add to dashboard Cite

show abstract

“…Another important consideration is that the capacitor should have a high breakdown field E BD (= V BD /d, where V BD is the breakdown gate voltage), allowing for the application of a large V G across the capacitor to obtain a large ∆n s . Dielectric layers obtained by atomic layer deposition (ALD) are known to have a high E BD [22]. In particular, if 50-nm-thick HfO 2 (k ∼ 20) dielectric layer is adopted and 10 V of V G (electric field of 0.2 V/nm) is applied, ∆n s ∼ 2×10 13 cm −2 .…”

Section: Introductionmentioning

confidence: 99%

Electric field effect on magnetism in metallic ultra-thin films

Chiba

2015

Front. Phys.

View full text Add to dashboard Cite

Citation:Chiba D (2015) Electric field effect on magnetism in metallic ultra-thin films. Front. Phys. 3:83. doi: 10.3389/fphy.2015.00083 Electric field effect on magnetism in metallic ultra-thin films Daichi Chiba * Department of Applied Physics, The University of Tokyo, Tokyo, JapanRecent experimental developments on the electric field effect on magnetism in metallic magnetic materials are reviewed. The change in the electron density at the surface of metallic ultra-thin magnets by the application of an electric field results in modulations of the Curie temperature, magnetic moment, magnetic anisotropy, and domain wall velocity. The study focused on this paper is the electric field effect on the Curie temperature (magnetic phase transition) in Pt/Co ultra-thin film systems. Electric field modifications of the magnetic moment induced by ferromagnetic proximity effects in Pd, which is usually a nonmagnetic element, are also discussed.

show abstract

“…A possibility to achieve area-selective deposition by ALD is by tailoring the surface properties prior to growth as ALD processes rely critically on surface reactions. Previously, several areaselective ALD approaches based on masking designated areas by resist films 11 or self-assembled monolayers 12 using top-down patterning techniques have been investigated, but to date only the fabrication of structures with micrometer dimensions have been demonstrated by these approaches.…”

mentioning

confidence: 99%

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

Mackus

Mulders²,

Sanden

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policy If you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition ͑EBID͒ with area-selective deposition of high quality material by atomic layer deposition ͑ALD͒. Because virtually pure, polycrystalline Pt nanostructures are obtained, the method extends the application possibilities of EBID, whereas compared to other area-selective ALD approaches, a much higher resolution is attainable; potentially down to sub-10 nm lateral dimensions.

show abstract

Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications

Cited by 181 publications

References 23 publications

High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts

High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts

Electric field effect on magnetism in metallic ultra-thin films

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

Contact Info

Product

Resources

About