Low-temperature annealing and hydrogenation of defects at the Si–SiO2 interface

Johnson, N. M.; Biegelsen, D. K.; Moyer, M. D.

doi:10.1116/1.571070

Cited by 80 publications

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“…Because the NAOS method is conducted in a wet chemical station, it produces residual OH groups that affect the fixed charge density, resulting in the greater N f value of Al 2 O 3 /SiO 2 /Si. PMA annealing was expected to remove these residual OH groups . The C / C ox – V curves of the Al 2 O 3 /Si and Al 2 O 3 /SiO 2 /Si samples were sharper after the PMA treatment because their fixed charge density was greatly reduced; accordingly, the calculated N f value of Al 2 O 3 /Si was decreased after PMA treatment (3.9 × 10 12 cm −2 ) and that of Al 2 O 3 /SiO 2 /Si decreased dramatically (2.1 × 10 12 cm −2 ).…”

Section: Resultsmentioning

confidence: 99%

Improved Interface and Electrical Properties by Inserting an Ultrathin SiO₂ Buffer Layer in the Al₂O₃/Si Heterojunction

Kim

Choi

Ryu

et al. 2019

Adv Funct Materials

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An ultrathin SiO 2 interfacial buffer layer is formed using the nitric acid oxidation of Si (NAOS) method to improve the interface and electrical properties of Al 2 O 3 /Si, and its effect on the leakage current and interfacial states is analyzed. The leakage current density of the Al 2 O 3 /Si sample (8.1 × 10 −9 A cm −2 ) due to the formation of low-density SiO x layer during the atomic layer deposition (ALD) process, decreases by approximately two orders of magnitude when SiO 2 buffer layer is inserted using the NAOS method (1.1 × 10 −11 A cm −2 ), and further decreases after post-metallization annealing (PMA) (1.4 × 10 −12 A cm −2 ). Based on these results, the influence of interfacial defect states is analyzed. The equilibrium density of defect sites (N d ) and fixed charge density (N f ) are both reduced after NAOS and then further decreased by PMA treatment. The interface state density (D it ) at 0.11 eV decreases about one order of magnitude from 2.5 × 10 12 to 7.3 × 10 11 atoms eV −1 cm −2 after NAOS, and to 3.0 × 10 10 atoms eV −1 cm −2 after PMA. Consequently, it is demonstrated that the high defect density of the Al 2 O 3 /Si interface is drastically reduced by fabricating ultrathin high density SiO 2 buffer layer, and the insulating properties are improved.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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Section: Resultsmentioning

confidence: 99%

Improved Interface and Electrical Properties by Inserting an Ultrathin SiO₂ Buffer Layer in the Al₂O₃/Si Heterojunction

Kim

Choi

Ryu

et al. 2019

Adv Funct Materials

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“…It was revealed that the RF plasma treatment of Al-SiO 2 -Si structures with hydrogen or nitrogen plasma gives rise to the atomic hydrogen saturation of the subsurface silicon layer [20,30,44,99]. The processes of interaction of hydrogen with defects in semiconductors and semiconductor structures can be divided into two main types.…”

Section: Plasma Influence On Defects In the Subsurface Silicon Layermentioning

confidence: 99%

Untitled

2008

Semicond. phys. quantum electron. optoelectron.

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The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro-and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO 2-Si interface and SiO 2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.

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“…[11][12][13][14] In the forming gas annealing process (FGA), hydrogen can passivate oxide defects and dangling bonds by forming Si-H bonds. [15][16][17] However, hydrogen-containing species may also generate carrier trapping sites in the oxide under either hot-carrier or ionizing radiation conditions. 18,19 Although several studies have been carried out on this subject, few studies have investigated whether hydrogen annealing has any side effects may degrade the reliability of NAND flash memories.…”

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Effects of Hydrogen on Endurance Characteristics in NAND Flash Memories

et al. 2022

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This study comprehensively investigates the effect of hydrogen content in forming gas annealing (FGA) on the endurance of NAND flash memories by statistically analyzing the transconductance (Gm,max) characteristics. The Gm,max degradation (ΔGm,max) worsened with higher cycling temperature, delayed time period from erasing to programming (tEP) operation, and higher word-line bias (VA) during tEP. Moreover, these effects become more pronounced as the hydrogen content in FGA increases. Using the measured Gm,max distributions and Monte -Carlo TCAD technology, the activation energy (EA) of oxide damage creation can be extracted. The extracted EA values were 50 meV and 160 meV for the diluted (4%) and pure (100%) hydrogen samples, respectively. This suggests that a higher hydrogen concentration results in more ionized hydrogen atoms remaining in the oxide layer. During tEP, these hydrogen ions can drift near the Si/SiO2 surface, where they may react to form trap states. EA is revealed to have a linear relationship with respect to VA, where the slope is independent of the hydrogen content in FGA.

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Low-temperature annealing and hydrogenation of defects at the Si–SiO2 interface

Abstract: Articles you may be interested inPostgrowth hydrogen treatments of nonradiative defects in low-temperature molecular beam epitaxial Si

Cited by 80 publications

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Improved Interface and Electrical Properties by Inserting an Ultrathin SiO₂ Buffer Layer in the Al₂O₃/Si Heterojunction

Improved Interface and Electrical Properties by Inserting an Ultrathin SiO₂ Buffer Layer in the Al₂O₃/Si Heterojunction

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Effects of Hydrogen on Endurance Characteristics in NAND Flash Memories

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Low-temperature annealing and hydrogenation of defects at the Si–SiO2 interface

Abstract: Articles you may be interested inPostgrowth hydrogen treatments of nonradiative defects in low-temperature molecular beam epitaxial Si

Cited by 80 publications

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Improved Interface and Electrical Properties by Inserting an Ultrathin SiO2 Buffer Layer in the Al2O3/Si Heterojunction

Improved Interface and Electrical Properties by Inserting an Ultrathin SiO2 Buffer Layer in the Al2O3/Si Heterojunction

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Effects of Hydrogen on Endurance Characteristics in NAND Flash Memories

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Improved Interface and Electrical Properties by Inserting an Ultrathin SiO₂ Buffer Layer in the Al₂O₃/Si Heterojunction

Improved Interface and Electrical Properties by Inserting an Ultrathin SiO₂ Buffer Layer in the Al₂O₃/Si Heterojunction