Low-Temperature and UV Irradiation Effect on Transformation of Zirconia -MPS nBBs-Based Gels into Hybrid Transparent Dielectric Thin Films

Abstract

Bottom-up approaches in solutions enable the low-temperature preparation of hybrid thin films suitable for printable transparent and flexible electronic devices. We report the obtainment of new transparent PMMA/ZrO2 nanostructured -building blocks (nBBs) hybrid thin films (61–75 nm) by a modified sol-gel method using zirconium ethoxide, Zr(OEt)4, and 3-methacryloxypropyl trimethoxysilane (MPS) as a coupling agent and methylmethacrylate monomer (MMA). The effect of low-temperature and UV irradiation on the nBBs gel films is discussed. The thermal behaviors of the hybrid sols and as-deposed gel films were investigated by modulated thermogravimetric (mTG) and differential scanning calorimetry (DSC) analysis. The chemical structure of the resulted films was elucidated by X-ray photoelectron (XPS), infrared (IR) and Raman spectroscopies. Their morphology and crystalline structure were observed by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and grazing incidence X-ray diffraction. The cured films show zirconia nanocrystallites of 2–4 nm in the hybrid matrix and different self-assembled structures for 160 °C or UV treatment; excellent dielectric behavior, with dielectric constant values within 6.7–17.9, depending on the Zr(OEt)4:MMA molar ratio, were obtained.

35‐1: Invited Paper: High‐quality high‐k ZrO2‐based dielectric film with low leakage current

“…In contrast, metal oxide dielectrics with high permittivity offer enhanced areal capacitance and reduced leakage current, enabling lower operating voltages and improved device performance. High-k metal oxide dielectric films such as Al2O3, ZrO2, and HfO2 have garnered attention for their simple, cost-effective production via solution-processing techniques like spin coating and inkjet printing [9][10][11][12][13] .…”

Hybrid Nanostructures Based of Ta2O5-PMMA for Electronic Applications

“…In order to use as a dielectric layer in TFTs and OTFT structure, the main requiremnts for materials as organic and inorganic species has to have a small There are a lot of oxide nanoparticles that are considered promotors for dielectric properties such as SiO2, ZrO2, Ta2O5, HfO2, etc [3][4][5].…”