Low temperature and roll-to-roll spatial atomic layer deposition for flexible electronics

Poodt, Paul; Knaapen, R.; Illiberi, A.; Roozeboom, F.; Asten, Almie van

doi:10.1116/1.3667113

Cited by 75 publications

(62 citation statements)

References 10 publications

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“…While industry versions of these reactors have the advantages of operating sheet-to-sheet and in-line with other processes, 6 fully realizing the high throughput potential of AP-SALD will likely require R2R processing. 5 Prototypes of these reactors have started to appear, 34,43,47 mainly for Al 2 O 3 deposition. The knowledge generated on AP-SALD ZnO (intrinsic and doped) using the reactors shown in Sec.…”

Section: Discussionmentioning

confidence: 99%

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Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

et al. 2015

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Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

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Section: Discussionmentioning

confidence: 99%

“…45,46 AP-SALD ZnO could be used as the semiconductor in TFTs. 9,20,40,41,47,48 This is particularly important because TFTs (acting as a switch) have become a crucial part of the electronics industry, especially for displays. Several million TFTs are produced each year for displays.…”

Section: Ap-sald Of Intrinsic and Doped Zno: Synthesis And Devicesmentioning

confidence: 99%

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

et al. 2015

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“…It is known, however, that for the TMA/H 2 O reaction at temperatures <100 C, the purge step after the water half-reaction becomes rate-limiting, as at these temperatures the water sticking coefficient is relatively high, leading to excess multilayer(s) of water adsorbed on the substrate. 12,16,17 If the excess water is not sufficiently desorbed in the purge step, it will react with TMA in the consecutive TMA half-reaction, leading to an undesired CVD component in the ALD reaction.…”

Section: A108-5 Poodt Et Almentioning

confidence: 99%

On the kinetics of spatial atomic layer deposition

Poodt¹,

Lieshout²,

Illiberi³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Spatial atomic layer deposition (ALD) is a promising technology for high deposition rate and high-throughput ALD that can be used for roll-to-roll and large-area applications. In an ideal spatial ALD reactor, the design of the injector should be tuned to the deposition kinetics of the ALD reaction, requiring an in-depth knowledge of the dependencies of the growth per cycle (GPC) on the main kinetic parameters. The authors have investigated the deposition kinetics of spatial ALD of alumina from trimethylaluminum and H2O at atmospheric pressure. A kinetic model was developed, which describes the growth per cycle as a function of the main kinetic parameters. The observation of a √t time dependency in the GPC indicates that precursor diffusion to substrate is rate limiting. Next to a fundamental insight into the kinetics of atmospheric pressure spatial ALD, this model can be used for design optimization of new spatial ALD reactors. Furthermore, the model shows that the maximum alumina deposition rates obtainable with spatial ALD are in the order of several nm/s.

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“…11 For this reason, atmospheric pressure spatial-ALD is emerging as an industrially scalable technique for the deposition of thin film electrodes (e.g., ZnO) and encapsulation (e.g., by Al 2 O 3 thin-films) of solar and electronic devices. 10,12 In this paper, we report on the stability of the electrical, optical and structural properties of spatial-ALD intrinsic (i-ZnO) and In-doped ZnO (In:ZnO) films, exposed to a high humidity and high temperature environment [85% relative humidity (RH), 85 C]. The effect of spatial-ALD Al 2 O 3 thin film encapsulation in enhancing the stability of ZnO films has also been tested.…”

Section: Introductionmentioning

confidence: 99%

On the environmental stability of ZnO thin films by spatial atomic layer deposition

Illiberi¹,

Scherpenborg²,

Theelen³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Undoped and indium-doped ZnO films have been deposited by atmospheric spatial atomic-layer-deposition (spatial-ALD). The stability of their electrical, optical, and structural properties has been investigated by a damp-heat test in an environment with 85% relative humidity at 85 °C. The resistivity of the ZnO films increased during damp-heat exposure mainly due to a sharp decrease in the carrier mobility, while the carrier density and transparency degraded only partially. The increase in resistivity can be ascribed to a degradation of the structural properties of ZnO films, resulting in a higher level of tensile stress, as indicated by x-ray diffraction analysis, and in a reduced near-ultravoilet emission level in their photoluminescence spectra. Al2O3 thin (25–75 nm) films grown by spatial-ALD at 0.2 nm/s are used as moisture barrier to effectively enhance the stability of the electrical and structural properties of the films.

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Low temperature and roll-to-roll spatial atomic layer deposition for flexible electronics

Cited by 75 publications

References 10 publications

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

On the kinetics of spatial atomic layer deposition

On the environmental stability of ZnO thin films by spatial atomic layer deposition

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