2011
DOI: 10.1116/1.3667113
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Low temperature and roll-to-roll spatial atomic layer deposition for flexible electronics

Abstract: Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This; however, requires low-temperature processing and handling of flexible substrates. The authors investigate the process conditions under which low-temperature spatial atomic layer deposition of alumina from trimethyl aluminum and water is possible. The water partial pressure is the critical parameter in this case. Finally, our approach to… Show more

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Cited by 75 publications
(62 citation statements)
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References 10 publications
(11 reference statements)
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“…While industry versions of these reactors have the advantages of operating sheet-to-sheet and in-line with other processes, 6 fully realizing the high throughput potential of AP-SALD will likely require R2R processing. 5 Prototypes of these reactors have started to appear, 34,43,47 mainly for Al 2 O 3 deposition. The knowledge generated on AP-SALD ZnO (intrinsic and doped) using the reactors shown in Sec.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…While industry versions of these reactors have the advantages of operating sheet-to-sheet and in-line with other processes, 6 fully realizing the high throughput potential of AP-SALD will likely require R2R processing. 5 Prototypes of these reactors have started to appear, 34,43,47 mainly for Al 2 O 3 deposition. The knowledge generated on AP-SALD ZnO (intrinsic and doped) using the reactors shown in Sec.…”
Section: Discussionmentioning
confidence: 99%
“…45,46 AP-SALD ZnO could be used as the semiconductor in TFTs. 9,20,40,41,47,48 This is particularly important because TFTs (acting as a switch) have become a crucial part of the electronics industry, especially for displays. Several million TFTs are produced each year for displays.…”
Section: Ap-sald Of Intrinsic and Doped Zno: Synthesis And Devicesmentioning
confidence: 99%
“…It is known, however, that for the TMA/H 2 O reaction at temperatures <100 C, the purge step after the water half-reaction becomes rate-limiting, as at these temperatures the water sticking coefficient is relatively high, leading to excess multilayer(s) of water adsorbed on the substrate. 12,16,17 If the excess water is not sufficiently desorbed in the purge step, it will react with TMA in the consecutive TMA half-reaction, leading to an undesired CVD component in the ALD reaction.…”
Section: A108-5 Poodt Et Almentioning
confidence: 99%
“…11 For this reason, atmospheric pressure spatial-ALD is emerging as an industrially scalable technique for the deposition of thin film electrodes (e.g., ZnO) and encapsulation (e.g., by Al 2 O 3 thin-films) of solar and electronic devices. 10,12 In this paper, we report on the stability of the electrical, optical and structural properties of spatial-ALD intrinsic (i-ZnO) and In-doped ZnO (In:ZnO) films, exposed to a high humidity and high temperature environment [85% relative humidity (RH), 85 C]. The effect of spatial-ALD Al 2 O 3 thin film encapsulation in enhancing the stability of ZnO films has also been tested.…”
Section: Introductionmentioning
confidence: 99%