On the kinetics of spatial atomic layer deposition

Poodt, Paul; Lieshout, Joep van; Illiberi, A.; Knaapen, R.; Roozeboom, F.; Asten, Almie van

doi:10.1116/1.4756692

Cited by 53 publications

(50 citation statements)

References 15 publications

(15 reference statements)

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“…15 Hence, it can be used to study the change of density as a function of process parameters. 24 In this study, almost full surface saturation was already reached at $15 ms of residence time at 150 C reactor temperature. Some information can be extracted from time resolved quartz crystal microbalance (QCM) studies.…”

Section: A Reagent Concentration Dependencementioning

confidence: 50%

Spatial atomic layer deposition: Performance of low temperature H2O and O3 oxidant chemistry for flexible electronics encapsulation

Maydannik

Plyushch

Cameron

2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 filmsWater and oxygen were compared as oxidizing agents for the Al 2 O 3 atomic layer deposition process using spatial atomic layer deposition reactor. The influence of the precursor dose on the deposition rate and refractive index, which was used as a proxy for film density, was measured as a function of residence time, defined as the time which the moving substrate spent within one precursor gas zone. The effect of temperature on the growth characteristics was also measured. The water-based process gave faster deposition rates and higher refractive indices but the ozone process allowed deposition to take place at lower temperatures while still maintaining good film quality. In general, processes based on both oxidation chemistries were able to produce excellent moisture barrier films with water vapor transmission rate levels of 10 À4 g/m 2 day measured at 38 C and 90% of relative humidity on polyethylene naphthalate substrates. However, the best result of <5 Â 10 À5 was obtained at 100 C process temperature with water as precursor.

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Section: A Reagent Concentration Dependencementioning

confidence: 50%

Spatial atomic layer deposition: Performance of low temperature H2O and O3 oxidant chemistry for flexible electronics encapsulation

Maydannik

Plyushch

Cameron

2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This process is repeated until the desired thickness is achieved. With the surface reaction kinetics generally being very fast, 45,46 and with much shorter purge times than for a large reaction chamber, the net deposition rate can reach the nm/s range. 46 Consequently, spatial ALD can achieve high throughput processing and the deposition of relatively thick films.…”

Section: Spatial Aldmentioning

confidence: 99%

History of atomic layer deposition and its relationship with the American Vacuum Society

Parsons¹,

Elam²,

George³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. This article explores the history of atomic layer deposition (ALD) and its relationship with the American Vacuum Society (AVS). The authors describe the origin and history of ALD science in the 1960s and 1970s. They also report on how the science and technology of ALD progressed through the 1990s and 2000s and continues today. This article focuses on how ALD developed within the AVS and continues to evolve through interactions made possible by the AVS, in particular, the annual International AVS ALD Conference. This conference benefits students, academics, researchers, and industry practitioners alike who seek to understand the fundamentals of self-limiting, alternating binary surface reactions, and how they can be applied to form functional (and sometimes profitable) thin film materials. The flexible structure of the AVS allowed the AVS to quickly organize the ALD community and create a primary conference home. Many new research areas have grown out of the original concepts of "Atomic Layer Epitaxy" and "Molecular Layering," and some of them are described in this article. The people and research in the ALD field continue to evolve, and the AVS ALD Conference is a primary example of how the AVS can help a field expand and flourish.

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“…Such a design allows for continuous deposition without intermittent gas filling and purging. Also, there is no interruption caused by sample loading/unloading and system heating/cooling, making the whole process time‐efficient . More importantly, in conventional ALD processes, the unreacted precursor is purged away by inert gas or deposited on the chamber wall when the other precursor is introduced, leading to a major loss of precursors.…”

Section: Surface Modification Methodsmentioning

confidence: 99%

Surface and Subsurface Reactions of Lithium Transition Metal Oxide Cathode Materials: An Overview of the Fundamental Origins and Remedying Approaches

Xiao

Sun

2018

Advanced Energy Materials

222

168

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The aggressive consumption of fossil fuels has resulted in the uncontrolled release of greenhouse gases such as carbon dioxide and methane into the atmosphere, trapping heat and causing havoc to the environment. With this in mind, the development of sustainable energy is imperative. Renewable energy will fail to reach the anticipated impact unless more efficient way to store and use electricity is found. Therefore, high-performance energy-storage devices with high energy and power density are required for renewable energy sustainability and storage security. Electrochemical batteries have been long considered as one of the most qualified candidates for providing reliable energy storage. Taking into account the safety, power density, cost, longevity and efficiency, rechargeable lithium-ion batteries (LIBs) are the most successful electrochemical storage systems available. The extensive Lithium-ion batteries (LIBs) have become one of the most prevailing techniques for rechargeable batteries. Lithium transition metal oxides are prevalent cathode materials currently, but they face great challenges due to unsatisfactory energy density, chemical/electrochemical instability, and elemental scarcity concerns. Surface/subsurface is the interface where lithium ions cross between the electrolyte and the cathode materials. Its properties and complicated nature are unambiguously regarded as a crucial controlling factor for the overall performance. Tremendous efforts have been made in the exploration of surface modification methods with remarkable progress hitherto. The purpose of this work is to review these surface behaviors in order to understand their fundamental origins and provide a summary of various surface modification methods that can be used to address impeding issues. Finally, a rational method of surface modification is proposed for use in cathode materials.

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On the kinetics of spatial atomic layer deposition

Cited by 53 publications

References 15 publications

Spatial atomic layer deposition: Performance of low temperature H2O and O3 oxidant chemistry for flexible electronics encapsulation

Spatial atomic layer deposition: Performance of low temperature H2O and O3 oxidant chemistry for flexible electronics encapsulation

History of atomic layer deposition and its relationship with the American Vacuum Society

Surface and Subsurface Reactions of Lithium Transition Metal Oxide Cathode Materials: An Overview of the Fundamental Origins and Remedying Approaches

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