Low temperature (&amp;#x003C;180 &amp;#x00B0;C) bonding for 3D integration

Huang, Yi-Wen; Tzeng, Ruoh-Ning; Chien, Yu-San; Shy, Ming-Shaw; Lin, T.Y.; Chen, Kou-Hua; Chuang, Ching-Te; Hwang, Wei; Chiu, Chi-Tsung; Tong, Ho‐Ming; Chen, Kuan‐Neng

doi:10.1109/3dic.2013.6702319

Cited by 3 publications

(2 citation statements)

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“…Inspiring from the co-sputtered concept, Chen and coworkers proposed a novel bonding method at 180 C using Ti as the passivation layer on Cu surface [42]. Moreover, the interdiffusion behavior of Cu through Ti passivation layer was explained and demonstrated using Auger electron spectroscopy [43]. Cu is known to have the lower activation energy at the surface and the smaller atomic volume (72 bohr 3 ) compared to Ti vacancy volume (75.48 bohr 3 ) [44,45].…”

Section: Cu-cumentioning

confidence: 99%

“…The advantage of Constantan is that its density is lower than that of pure Cu (Ni has higher atomic radius of 1.49 Å than Cu (1.41 Å )). Added to this, Cu is known to have lower activation energy at the surface [43]. Thus, under external stimulus such as temperature and pressure, constantan is not a hindrance for Cu diffusion.…”

Section: Low Temperature Cu-cu Bonding Using Metal-alloymentioning

confidence: 99%

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Low Temperature Cu–Cu Bonding Technology in Three-Dimensional Integration: An Extensive Review

Panigrahy

Kuan-Neng

2018

Journal of Electronic Packaging

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Arguably, the integrated circuit (IC) industry has received robust scientific and technological attention due to the ultra-small and extremely fast transistors since past four decades that consents to Moore's law. The introduction of new interconnect materials as well as innovative architectures has aided for large-scale miniaturization of devices, but their contributions were limited. Thus, the focus has shifted toward the development of new integration approaches that reduce the interconnect delays which has been achieved successfully by three-dimensional integrated circuit (3D IC). At this juncture, semiconductor industries utilize Cu–Cu bonding as a key technique for 3D IC integration. This review paper focuses on the key role of low temperature Cu–Cu bonding, renaissance of the low temperature bonding, and current research trends to achieve low temperature Cu–Cu bonding for 3D IC and heterogeneous integration applications.

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Section: Cu-cumentioning

confidence: 99%

Section: Low Temperature Cu-cu Bonding Using Metal-alloymentioning

confidence: 99%