Low-temperature activation of boron in silicon by soft X-ray irradiation

Heya, Akira; Matsuo, Naoto; Kanda, Kazuhiro; Noguchi, Takashi

doi:10.1109/iwjt.2014.6842022

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Soft X-ray Irradiation1

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2018

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(2 citation statements)

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“…A schematic diagram of a soft X-ray activation apparatus and the setup for measuring sample temperature using a pyrometer are described elsewhere. 26) The undulator source in the SR facility generates soft X-rays with high brilliance (5 × 10 15 photons=s=mm 2 mrad 2 =0.1% b.W. ), and the photon energy of X-rays is controlled by the gap length of the undulator.…”

Section: Soft X-ray Irradiationmentioning

confidence: 99%

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Low-temperature activation of boron ion in silicon substrate using B₁₀H₁₄ ⁺ cluster and by soft X-ray irradiation

Heya¹,

Matsuo²,

Kanda³

2018

Jpn. J. Appl. Phys.

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To achieve an ultrashallow junction, a novel activation method for a B dopant in a Si wafer using a soft X-ray undulator in a synchrotron radiation facility was proposed. In addition, B10H14+ clusters were used to obtain high activation ratios and small junction depths. A low-sheet resistance of 245 Ω/sq was obtained using B10H14+ clusters and by soft X-ray irradiation at 490 °C. A p–n junction was fabricated at a treatment temperature of 440 °C without excessive dopant diffusion. The mechanism of low-temperature activation by soft X-ray irradiation is discussed in comparison with that of conventional furnace annealing and on the basis of the difference between B+ and B10H14+ clusters.

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Section: Soft X-ray Irradiationmentioning

confidence: 99%

“…The results were already published in the proceedings of IDW2014. 26) However, the p-n junction characteristics have not been evaluated yet. In addition, the absorption of soft X-rays and the defects generated after soft X-ray irradiation were not discussed.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature activation of boron ion in silicon substrate using B₁₀H₁₄ ⁺ cluster and by soft X-ray irradiation

Heya¹,

Matsuo²,

Kanda³

2018

Jpn. J. Appl. Phys.

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show abstract

Low-temperature activation of boron in silicon by soft X-ray irradiation

Cited by 1 publication

References 9 publications

Low-temperature activation of boron ion in silicon substrate using B₁₀H₁₄ ⁺ cluster and by soft X-ray irradiation

Low-temperature activation of boron ion in silicon substrate using B₁₀H₁₄ ⁺ cluster and by soft X-ray irradiation

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Low-temperature activation of boron in silicon by soft X-ray irradiation

Cited by 1 publication

References 9 publications

Low-temperature activation of boron ion in silicon substrate using B10H14 + cluster and by soft X-ray irradiation

Low-temperature activation of boron ion in silicon substrate using B10H14 + cluster and by soft X-ray irradiation

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Product

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Low-temperature activation of boron ion in silicon substrate using B₁₀H₁₄ ⁺ cluster and by soft X-ray irradiation

Low-temperature activation of boron ion in silicon substrate using B₁₀H₁₄ ⁺ cluster and by soft X-ray irradiation