Low switching loss, high power gate turn-off thyristors (GTOs) with n-buffer and new anode short structure

Ogura, T.; Kitagawa, M.; Ohashi, Hiromichi

doi:10.1109/pesc.1988.18223

Cited by 11 publications

(4 citation statements)

References 2 publications

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“…Cylindrical anode short structure [7] devices have been made using the same conditions to compare with RAS structure devices. The shorting rates are decided as low as possible.…”

Section: Discussion the Switching Lossmentioning

confidence: 99%

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8000-V 1000-A gate turn-off thyristor with low on-state voltage and low switching loss

Kekura

Akiyama

Tani

et al. 1990

IEEE Trans. Power Electron.

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“…Cylindrical anode short structure [7] devices have been made using the same conditions to compare with RAS structure devices. The shorting rates are decided as low as possible.…”

Section: Discussion the Switching Lossmentioning

confidence: 99%

“…So, in this paper the method of anode shorting is studied. An effective removal of drawing out excess carriers, even at a low shorting rate, can be obtained by an anode short combined with a p-i-n stivcture [7]. Fig.…”

Section: Introductionmentioning

confidence: 99%

8000-V 1000-A gate turn-off thyristor with low on-state voltage and low switching loss

Kekura

Akiyama

Tani

et al. 1990

IEEE Trans. Power Electron.

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“…But unfortunately, the turn-off time of the thyristor is increased. In view of this, we consult the method to gain low turn-off loss in Si thyristor by the anode-or cathode-shorts [10,11] to improve the turn-off characteristics in SiC thyristors.…”

Section: Introductionmentioning

confidence: 99%

Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time*

Liu¹,

Pu²,

Wang

2019

Chinese Phys. B

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An ultra-high voltage 4H-silicon carbide (SiC) gate turn-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p+/n+ region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n+–p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm2.

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“…To reduce the turn-off switching loss and current tail of many GTOs, a structure known as anode shorting is employed [6][7]. In this structure, a small portion of the internal n-region is shorted to the anode contact, which partially bypasses the p region at the anode, as shown in Fig.…”

Section: Failure Issues Related To the Parasitic Diode Of The Etomentioning

confidence: 99%

Abnormal failure mechanism of the asymmetrical emitter turn-off thyristor in high-frequency converters

Motto²,

Huang³

Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248)

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The Emitter Turn-Off thyristor (ETO) is a newMOS-controlled thyristor that is suitable for use in highpower converters due to its improved switching performance and easy control. This paper analyzes the abnormal failures related to the parasitic diode of the ETO in high-frequency converters for the first time. To prevent this failure, several solutions are proposed and improved ETOs are developed. Experimental results show that the proposed solutions can properly solve this problem. I. INTROUDUCTIONIn the past decade, power conversion technology developed very fast due to the emerging of advanced power semiconductor devices. High power converters are increasingly used in drives for heavy-duty traction, power quality management, and magnetic energy storage systems. The Emitter Turn-Off Thyrisor (ETO) is a new type of GTO technology based superior high power semiconductor devices that is suitable to apply in high power converters [1][2][3][4]. By properly packaging commercial GTOs and MOSFETs together, the ETO achieves fast switching speed, snubberless turn-off capability and voltage-control. These merits enable the ETO the capability of high power and high switching frequency. The high frequency operation of a megawatt voltage source inverter equipped with ETOs has been demonstrated by the authors in [4]. However, a new failure issue related to the parasitic diode of the ETO in converter applications is also discovered [5]. This paper analyzes the failure mechanism for this kind of failure for the first time. Possible solutions are proposed and verified. II. FAILURE ISSUES RELATED TO THE PARASITIC DIODE OF THE ETOA. The Parasitic Diode of the Asymmetrical ETO.To reduce the turn-off switching loss and current tail of many GTOs, a structure known as anode shorting is employed [6][7]. In this structure, a small portion of the internal n-region is shorted to the anode contact, which partially bypasses the p region at the anode, as shown in Fig. 1(a). This structure helps to remove the excess carriers in the N-base region quickly during the turn-off transient so the duration of the current tail is short. This structure also serves to reduce the gain of the PNP transistor portion of the GTO and therefore the amplitude of the current tail is reduced. So the turn-off switching loss of anode-short GTO is reduced and the switching speed is improved.Trading off its superior switching performance, the anode shorted GTO can only block a low reverse voltage (about 20 V) and has higher conduction loss due to less conductivity modulation. Another problem of the anode shorted GTO which is less obvious is that there is now a parasitic diode D P from the gate to the anode. An equivalent representation of the anode shorted GTO considering the parasitic diode is shown in Fig. 1. Anode Cathode Gate (a) Anode Cathode GTO P+ N P N+ J3 J2 J1 N+ Gate P-i-n Diode (b) GTO D P Fig. 1 Anode short GTO equivalent representation based on (a) device model, and (b) circuit model.To improve the switching performance, the anode shorted GTOs are usual...

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Low switching loss, high power gate turn-off thyristors (GTOs) with n-buffer and new anode short structure

Cited by 11 publications

References 2 publications

8000-V 1000-A gate turn-off thyristor with low on-state voltage and low switching loss

8000-V 1000-A gate turn-off thyristor with low on-state voltage and low switching loss

Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time*

Abnormal failure mechanism of the asymmetrical emitter turn-off thyristor in high-frequency converters

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