Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO<sub>2</sub> Gate Dielectric and Excellent Uniformity

Samanta, Subhranu; Chand, Umesh; Xu, Shengqiang; Han, Kaizhen; Wu, Ying; Wang, Chengkuan; Kumar, Akash; Velluri, Hasita; Li, Yida; Fong, Xuanyao; Thean, Aaron; Gong, Xiao

doi:10.1109/led.2020.2985787

Cited by 52 publications

(43 citation statements)

References 20 publications

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“…morphous oxide semiconductor TFTs, due to their moderate mobility, low cost, large size uniformity, high transparency, and excellent flexibility, have been widely used in applications from large-scale display to flexible portable devices [1][2][3][4][5][6][7][8][9][10][11][12][13]. In addition, because of a low process temperature and extremely low off-state current (I off ), they have tremendous promise in emerging applications, including internet of things (IoT), monolithic three-dimensional (3D) integrated nano-electronic, and photonic systems [14][15][16][17], where low power and high performance are highly desired.…”

Section: Introductionmentioning

confidence: 99%

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

Han

Samanta

Sun

et al. 2021

IEEE J. Electron Devices Soc.

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We report high performance top-gate amorphous Indium-Gallium-Zinc-Oxide thin film transistors (α-IGZO TFTs) featuring the ultra-scaled equivalent oxide thickness (EOT) of sub-1.2 nm, achieving a decent peak transconductance (Gm) of 62 μS/μm at a drain to source voltage (VDS) of 2 V (33.4 μS/μm at VDS of 1 V) and an excellent drain induced barrier lowering (DIBL) of 17.6 mV/V, for a device with a channel length (LCH) of 160 nm. The best long channel device has a subthreshold swing (SS) of 67.5 mV/decade. This is enabled by using an aggressively scaled 5 nm high-k HfO2 as the gate dielectric. In addition, temperature study has been performed on α-IGZO TFTs. The key performance figure-of-merits, like field effect mobility (μeff), show negligible degradation at high temperature, indicating the great potential of α-IGZO TFTs for various emerging applications.

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Section: Introductionmentioning

confidence: 99%

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

Han

Samanta

Sun

et al. 2021

IEEE J. Electron Devices Soc.

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“…DGISFETs with silicon-on-insulator (SOI) − and polycrystalline silicon (poly-Si) reported higher sensitivities than single gate ion-sensitive field-effect transistors (ISFETs), − but the fabrication process of such DGISFETs requires high processing temperatures. On the other hand, indium gallium zinc oxide (IGZO) has attracted attention as a semiconductor material for DGISFETs on account of its amorphous nature, room-temperature processing, and superior electrical performance (good subthreshold swing (SS), I ON / I OFF ratio, threshold voltage ( V TH ), and mobility). − The sensing performance of a-IGZO-based DGISFETs depends on the material properties of the TG dielectrics and BG dielectrics. For good performance of DGISFETs, the choice of top gate dielectrics is important as it should have a high dielectric constant, a high band gap, and sensitivity higher than the Nernst limit.…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

Bhatt

Panda

2021

ACS Appl. Electron. Mater.

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Hafnium oxide gate dielectrics have elicited interest in dual gate ion-sensitive field-effect transistors because of their high dielectric constant, high band gap, and a good interface with amorphous indium gallium zinc oxide semiconductors. In this work, we have studied the pH sensing of double-gate ion-sensitive field-effect transistors with hafnium oxide and a stack of hafnium oxide/yttrium oxide as the top gate dielectric, and such a study has not been conducted earlier. Sputter deposition and postannealing of hafnium oxide and hafnium oxide/yttrium oxide were studied for reduction of defects at the interface of the semiconductor and the gate dielectric. A high pH sensitivity of 718 mV/pH was obtained with the stack of hafnium oxide/yttrium oxide, while with only hafnium oxide as the gate dielectric resulted in a pH sensitivity of 917 mV/pH but with lower mobility. The experimental results of pH sensitivity were benchmarked with the simulation and theoretical results. The highlights of the work include identification of diffusion of hafnium and yttrium into gallium to improve the sensitivity of the pH sensor by modification of the gate dielectric–semiconductor interface. High pH sensing of such devices makes them promising for various analytical and biomedical applications.

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“…For practical device application and circuit‐level integration, a top gate (TG) structured field effect transistor (FET), which usually includes a high‐ k dielectric layer, is necessary for independent gate control and practical device operation. [ 16,17 ] However, it is rather difficult to form a uniform and high‐quality dielectric layer on most 2DLMs as they lack dangling bonds on the surface for a homogeneous reaction during the atomic layer deposition (ALD) process. In addition, most of the reported MoS 2 ‐based TG FETs with an ALD high‐ k dielectric layer suffer from a serious n‐doping effect in the channel due to the sulfur vacancies, [ 18 ] which limits its practical application in large scale circuits.…”

Section: Introductionmentioning

confidence: 99%

Gate Stack Engineering in MoS₂ Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Sheng

Chen

Liao

et al. 2020

Adv Elect Materials

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2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD‐based top gate transistors suffer from a significant doping effect in the channel due to the subsequent deposition high‐k dielectric layer and metal gate, which limits their practical applications. In this work, the channel doping effect caused by various processing steps based on mechanical exfoliated MoS2 sheets is systematically investigated. This work illustrates a clear correlation among these steps and provides a simple and efficient methodology to realize high‐performance enhancement mode MoS2 field effect transistors, which can be extended to other 2D materials.

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Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO₂ Gate Dielectric and Excellent Uniformity

Cited by 52 publications

References 20 publications

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

Gate Stack Engineering in MoS₂ Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

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Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

Cited by 52 publications

References 20 publications

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

High Sensitivity of Dual Gate ISFETs Using HfO2 and HfO2/Y2O3 Gate Dielectrics

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Contact Info

Product

Resources

About

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO₂ Gate Dielectric and Excellent Uniformity

High Sensitivity of Dual Gate ISFETs Using HfO₂ and HfO₂/Y₂O₃ Gate Dielectrics

Gate Stack Engineering in MoS₂ Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect