Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part I: Process Development and Characterization

Nabki, Frédéric; Dusatko, Tomas A.; Vengallatore, Srikar; El-Gamal, M.N.

doi:10.1109/jmems.2011.2111355

Cited by 31 publications

(34 citation statements)

References 50 publications

(50 reference statements)

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“…As shown by (10), the intrinsic stresses in the films that compose the beam can cause axial forces on the beam that shift its resonant frequency. Therefore, the processing technology used for fabrication minimizes the structural axial stress such that its impact on the operation of the devices is not significant [17].…”

Section: A Operating Principlementioning

confidence: 99%

“…Integrated heaters can be added to the structure with another aluminum layer above the SiC. The fabrication process is detailed in [17].…”

Section: B Mechanical Designmentioning

confidence: 99%

“…Successful fabrication of the thin transducer gaps required process optimizations that are discussed in [17]. Fig.…”

Section: Fabricationmentioning

confidence: 99%

“…Equivalently, for a given resonant frequency, an SiC resonator would provide a higher signal drive than that of a silicon device because of the larger device dimensions. This paper presents detailed measurement results of megahertz-range MEMS beam resonators fabricated using a low-temperature (< 300 • C) SiC CMOS-compatible process detailed in [17]. The process was first reported in [18], and initial device measurements were reported in [19].…”

Section: Introductionmentioning

confidence: 99%

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Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Nabki

Cicek

Dusatko

et al. 2011

J. Microelectromech. Syst.

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Microelectromechanical beam resonators and arrays are fabricated using a custom low-temperature complementarymetal-oxide-semiconductor-compatible silicon carbide microfabrication process, detailed in Part I of this paper. Theoretical aspects are presented with modal analysis and numerical methods. Measurements of the resonant frequency, the quality factor, the transmission, and the tuning characteristics are presented for different device types and dimensions. Trends are analyzed, and performance metrics dependences are investigated. A tuning method based on integrated heaters is introduced and tested, yielding a very desirable constant insertion-loss tuning and a wide tuning range. Quality factors of up to 1493 and resonant frequencies of up to 26.2 MHz are demonstrated. Both the Young's modulus and the residual stress of the SiC film are extracted (261 GPa and < ±30 MPa, respectively), and favorably compare to values reported for polysilicon. [2010-0235] Index Terms-Micromechanical resonators, microelectromechanical systems (MEMS), resonator arrays, silicon carbide (SiC), surface micromachining, thermal tuning.

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Section: A Operating Principlementioning

confidence: 99%

“…Integrated heaters can be added to the structure with another aluminum layer above the SiC. The fabrication process is detailed in [17].…”

Section: B Mechanical Designmentioning

confidence: 99%

“…Successful fabrication of the thin transducer gaps required process optimizations that are discussed in [17]. Fig.…”

Section: Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Nabki

Cicek

Dusatko

et al. 2011

J. Microelectromech. Syst.

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“…Alternatively, it is also capable of operating at resonance under vacuum for enhanced sensitivity. The device is fabricated using a silicon carbide (SiC) surface micromachining technology as in [6][7][8], which is fully adapted for above-IC integration on standard CMOS substrates. This paper first describes the device design, and then presents finite-elements simulation results.…”

mentioning

confidence: 99%

Surface Micromachined Combined Magnetometer/Accelerometer for Above-IC Integration

Elsayed

Cicek

Nabki

et al. 2015

J. Microelectromech. Syst.

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Abstract-This work presents a combined magnetometer / accelerometer sharing a single surface micromachined structure. The device utilizes electrical current switching between two perpendicular directions on the structure to achieve a 2D inplane magnetic field measurement based on the Lorentz force. The device can concurrently serve as a 1D accelerometer for outof-plane acceleration, when the current is switched off. Accordingly, the proposed design is capable of separating magnetic and inertial force measurements, achieving higher accuracy through a single compact device. The sensor supports static operation at atmospheric pressure, precluding the need for complex vacuum packaging. It can alternatively operate at resonance under vacuum for enhanced sensitivity. The device is fabricated using a low temperature surface micromachining technology, which is fully adapted for above-IC integration on standard CMOS substrates. The resonance frequency of one of the fabricated structures is measured to be 6.53 kHz, with a quality factor of ~30, at a 10 mTorr ambient vacuum level. The magnetic field and acceleration sensitivities of the device are measured using discrete electronics to be 1.57 pF/T and 1.02 fF/g, respectively, under static operation.Index Terms-Microelectromechanical systems (MEMS), Lorentz force magnetometers, micromachined accelerometers, silicon carbide (SiC), surface micromachining, above-IC integration.

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Capacitive Pressure Sensors

Nie

Bao

Huang

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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This article addresses the principles, structure, measurement, fabrication, and packaging of capacitive pressure sensors. Because micromachined technologies have been widely used in the processing of sensors, particular focus is placed on silicon capacitive pressure sensors. Three different general approaches are introduced and compared in which the response of the sensor is due to the change of the spacing, area, and dielectric permittivity under pressure. Two methods to realize the front‐end circuitry, sensing of the capacitive sensor with AC modulation (continuous‐time approach) and switched capacitor interfaces, are then discussed. The fabrication processes such as bulk silicon micromachining, surface micromachining, and monolithic integration with circuits are presented and compared. The packaging for the sensors is discussed. Recently, other materials have been considered for capacitive pressure sensors because of their excellent performance in different application fields. The progress of emerging technologies and materials is introduced and compared. Finally, the applications of capacitive pressure sensors are briefly introduced.

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Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part I: Process Development and Characterization

Cited by 31 publications

References 50 publications

Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part II: Beam Resonators for MEMS Above IC

Surface Micromachined Combined Magnetometer/Accelerometer for Above-IC Integration

Capacitive Pressure Sensors

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