Abstract:Due to cost concerns, significant changes have been made in the silicon manufacturing process leading to thinner Si wafers. This change brings many challenges for copper metallization. One of the biggest challenges is to maintain low internal stress of the copper deposit. This is key to avoid solar wafer warpage and maintain good adhesion. Copper deposits with high ductility are also desired to prevent or reduce the potential for the copper deposit to crack under stress over time. Ideal copper deposits exhib… Show more
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