2023
DOI: 10.1016/j.mtcomm.2022.105241
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Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

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Cited by 4 publications
(1 citation statement)
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“…Metal oxide semiconductors, which play a crucial role in gas sensing applications, are divided into two distinct groups based on their majority carriers. N-type MOSs, such as ZnO [62,63], In 2 O 3 [64,65], Fe 3 O 2 [62,66], TiO 2 [67,68], WO 3 [69,70], and SnO 2 [71,72], exhibit electrons as their majority carriers, whereas p-type semiconductors, including NiO [73], Co 3 O 4 [74], Cr 2 O 3 [75], Mn 3 O 4 [76], and CuO [77], have holes as their majority carriers.…”
Section: Gas Sensing Mechanismmentioning
confidence: 99%
“…Metal oxide semiconductors, which play a crucial role in gas sensing applications, are divided into two distinct groups based on their majority carriers. N-type MOSs, such as ZnO [62,63], In 2 O 3 [64,65], Fe 3 O 2 [62,66], TiO 2 [67,68], WO 3 [69,70], and SnO 2 [71,72], exhibit electrons as their majority carriers, whereas p-type semiconductors, including NiO [73], Co 3 O 4 [74], Cr 2 O 3 [75], Mn 3 O 4 [76], and CuO [77], have holes as their majority carriers.…”
Section: Gas Sensing Mechanismmentioning
confidence: 99%