Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

Shostachenko, S. A.; Zakharchenko, R. V.; Ryzhuk, R. V.; Kulyamina, Darya A.; Каргин, Н.

doi:10.1117/12.2267053

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“…The sample was treated at 800-1000 ° C (Figure 2). Introduction silicon is possible to reduce specific contact resistance to 3.76·10 -7 Om·cm 2 , which is lower than resistance obtained in previous work without Si [16]. Figure 1.…”

Section: Resultsmentioning

confidence: 77%

Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

Shostachenko

Porokhonko

Zakharchenko

et al. 2017

J. Phys.: Conf. Ser.

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Abstract. This paper is dedicated to the experimental investigation of Ohmic contacts to the n + -doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10 -6 Ω·cm 2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

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Section: Resultsmentioning

confidence: 77%